A 60 GHz SiGe-HBT power amplifier 15 dBm output power



FREE-DOWNLOAD VH Do, V Subramanian… – Microwave and …, 2008 –
THE increasing capabilities of silicon technologies offer the possibility of highly integrated transceiver
circuits [mono- lithic microwave integrated circuits (MMICs)] even at V-band frequencies
(50–75 GHz). The utilization of SiGe-heterojunc- tion bipolar transistor (SiGe–HBT)