graphene field effect device
FREE-DOWNLOAD MC Lemme, TJ Echtermeyer
research ELECTRON DEVICE LETTERS, VOL. 28, NO. 4, APRIL 2007 . The top-gate
transfer characteristics of the Graphene-FED are shown in Fig. 3 for three different back-gate
fields Ebg. The drain current Id is clearly modulated by the top-gate field Etg.