A 1 V 23 GHz Low-Noise Amplifier in 45 nm Planar Bulk-CMOS Technology With High Q Inductors

WC Wang, ZD Huang, G Carchon… – Microwave and …, 2009 –
Abstract—A 23 GHz electrostatic discharge-protected low-noise amplifier (LNA) has been designed
and implemented by 45 nm planar bulk-CMOS technology with high- above-IC inductors. In the
designed LNA, the structure of a one-stage cascode amplifier with source inductive