A 5-GHz differential low-noise amplifier with high pin-to-pin ESD robustness in a 130-nm CMOS process


FREE-DOWNLOAD YW Hsiao… – Microwave Theory and Techniques, research …, 2009

Two electrostatic discharge (ESD)-protected 5-GHz differential low-noise amplifiers
(LNAs) are presented with con- sideration of pin-to-pin ESD protection. The pin-to-pin ESD issue
for differential LNAs is addressed for the first time in the literature. Fabricated in a 130-nm 



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