A wideband low noise amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS



FREE-DOWNLOAD MH Tsai, SSH Hsu, FL Hsueh, CP Jou… – Microwave and …, 2009

. A Wideband Low Noise Amplifier With 4 kV HBM ESD Protection in 65 nm RF CMOS .
Abstract—This study presents a wideband low noise amplifier (LNA) including electrostatic
discharge (ESD) protection circuits using 65 nm CMOS with a gate oxide thickness of only 2 nm. .




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