Computational study of tunneling transistor based on graphene nanoribbon


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FREE-DOWNLOAD P Zhao, J Chauhan… – Nano letters, 2009
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential
to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon
(GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass




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