dual-gated graphene field-effect transistor


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Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

FREE-DOWNLOADS Kim, J Nah, I Jo, D Shahrjerdi… – Applied Physics …, 2009
We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as
top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition
of Al2O3. Our devices show mobility values of over 8000 cm2/V s at room temperature, a .




IEEE PAPER UNITED STATES