SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED N-SI
Teimuraz Pagava, Levan Chkhartishvili, Manana Beridze, Magda Metskhvarishvili, Iamze Kalandadze, Darejan Khocholava, Nona Esiava, Maia Kevkhishvili, Marine Matcharashvili The aim of research is studying the mechanism of n–p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron concentration […]