graphene field effect device


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FREE-DOWNLOAD MC Lemme, TJ Echtermeyer
research ELECTRON DEVICE LETTERS, VOL. 28, NO. 4, APRIL 2007 . The top-gate
transfer characteristics of the Graphene-FED are shown in Fig. 3 for three different back-gate
fields Ebg. The drain current Id is clearly modulated by the top-gate field Etg.




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