p-Channel Ge MOSFET


COMPUTER COURSE ONLINE

p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

FREE-DOWNLOAD [PDF] HY Yu, M Ishibashi, JH Park… – Electron Device …, 2009
AS SILICON CMOS devices approach their fundamental scaling limit, diverse research is being
done to introduce novel structures and high-carrier-mobility materials such as Ge to devices
in order to overcome this limit [1]–[3]. Monolithic integration of Ge with Si devices could 




IEEE PAPER UNITED STATES