Design of a MM-Wave Power Amplifier in 90 nm CMOS Process

. 90-nm SOI CMOS SoC technology with low-power millimeter wave digital and RF
millimeter-wave frequency bands, using CMOS technology presents significant advantages of small size, low cost, low power consumption, and high-level integration. In parallel, there have been several recent efforts to implement critical millimeter-wave circuits such as low-noise amplifiers (LNAs), voltage-controlled oscillators (VCOs), and power amplifiers (PAs) in silicon (Si) . In particular, power amplifier design remains an important bottleneck in full transceiver integration, and the problems of low breakdown voltage and low power density are further exacerbated by the move to nanoscale CMOS for mm-wave operation.