MOSFET METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 2018


Advanced MOSFET Technologies for Next Generation Communication Systems-Perspective and Challenges: A Review.
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In this review, authors have retrospect the state-of-art dimension scaling and emerging other non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and Cylindrical Surrounding Double-Gate (CSDG) MOSFET . These are presented for the future

A Study on Electrical Characterization of Surface Potential and Threshold Voltage for Nano Scale FDSOI MOSFET
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In this paper the study of electrical characterization of Surface potential Vth threshold- voltage model is developed for FD SOI MOSFET . The threshold voltage is important parameter in device design. Scaling of device has positive impact on device performance

Novel Design of a Magnetically Switchable MOSFET using Magnetoresistive Elements
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Various research activities have been carried out, individually, in the fields of MOSFET design andanalysis, and magnetoresistance; however, ourresearch focused on the design and analysis of a magnetically switchable MOSFET with the application of magnetoresistive

Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability
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Article Preview Article Preview Article Preview The gate insulator process for SiC- MOSFET was examined and high-quality interface was realized by employing the pre-annealing process before high-temperature N 2 annealing. The pre-annealing evidently activated the

Analogue and RF performances of Fully Depleted SOI MOSFET
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Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich

INVESTIGATION ON THE ANALYSIS OF SINGLE MATERIAL SURROUNDED GATE SOI MOSFET
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In the present paper, we are investigating the advantages of using Surrounded gate structures over other planar SOI devices. We also analyzed the electrical characteristics of Double gate SOI MOSFET with Bulk SOI MOSFET . Furthermore, we have elaborated the

Packaging technology for highly integrated 10 kV SiC MOSFET module
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High-voltage SiC devices offer an attractive combination of fast switching and low losses, giving application users unprecedented levels of flexibility in choice of topology and control strategy for medium-and high-voltage power conversion. However, its really essential to

Suppression of short-circuit current with embedded source resistance in SiC- MOSFET
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Article Preview Article Preview Article Preview This work reports an SiC- MOSFET which replaces a part of the channel resistance with an additional embedded resistance, called a source resistance (R s). MOSFETs with R s have higher resistance during short circuit

SOI-like MOSFET with ESD and self Q1-heating effect reliability improvements
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A new structure of silicon on insulator (SOI)-like bulk silicon (Si) metal oxide semiconductor field-effect transistor ( MOSFET )(N Q2 SL BS) is proposed to improve the reliability of SOI MOSFET mainly with regards to their self-heating effect and electro-static discharge (ESD)

To study high performance analysis of surround gate SOI MOSFET
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In this paper, we are presenting a rigorous study about SOI MOSFET devices development. The development of SOI devices based on gate structure from single gate to surround gate is presented in this paper. We compared the various electrical characteristics between

4H-SiC trench MOSFET with ultra-low on-resistance by using miniaturization technology
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Article Preview Article Preview Article Preview The authors have developed 4H-SiC trench MOSFETs with orthogonal Deep-P structures (ODSs) to improve the trade-off between the on-resistance and the gate oxide field. The conditions of photolithography to realize a

High Frequency Resonant Operation of an Integrated Medium Voltage SiC MOSFET Power Module
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Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium voltage silicon carbide semiconductor power devices have a potential to replace vacuum tubes and allow for more

Study of OCTO type MOSFET (180nm Bulk CMOS technology of TSMC)
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This paper compares a conventional gate geometry to a new gate geometry with an octagonal shape using a 180nm TSMC technology. The goal is to improve the electrical performance of the MOSFET , due to previous studies using different gate geometries, the

Analysis and Investigation of Schottky Barrier MOSFET Current Injection with Process and Device Simulation
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In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. An improved structure containing topography is briefly discussed and further device simulations are applied with

Charracterisation and Analysis of High Voltage Silicon Carbide Mosfet
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In this chapter the theoretical capabilities of SiC power devices is compared to that of Si in order to better highlight the advantages of the new WBG semiconductor material and to emphasize the trend and advantages of switching from Si to SiC in power electronics

Study of different Parametric Variations of MOSFET Pressure Sensor
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There is a growing demand of miniaturization of the electronics world. A brief discussion for simulating and fabrication of the MOSFET based pressure sensor in nanoscale is being reviewed in this paper. Aim of this paper is to collect all the scaling challenges and their

Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10㎚ Double Gate MOSFET
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The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper

Recent Progress of SiC MOSFET Devices
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Article Preview Article Preview Article Preview SiC MOSFETs are superior candidates as next power semiconductor devices for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the

A SiC MOSFET based high efficiency interleaved boost converter for more electric aircraft
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Abstract Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms

Design of efficient ring VCO using nano scale double gate MOSFET
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In this paper a voltage controlled oscillator (VCO) using MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and Double Gate (DG) MOSFET are compared and analyzed. The comparison has been done on the basis of different parameters: voltage



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