polysilicon thin film transistor
Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs
Low temperature Aluminum induced crystallization process to get Poly – silicon films for thin film transistor application in active matrix displays
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The realization of high information-content active matrix flat-panel displays (FPDs) requires low temperature thin film transistor (TFT) process that is compatible with the thermal constraints imposed by common inexpensive glass panels. Aluminum induced
Poly -crystalline Silicon Thin Film Transistor : a Twodimensional Threshold Voltage Analysis using Greens Function Approach
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A two dimensional treatment of the potential distribution under the depletion approximation is presented for poly crystalline silicon thin film transistors. Greens function approach is adopted to solve the two dimensional Poissons equation. The solution for the potential
A New Evaluation Method of the Threshold Voltage for a Low Temperature Poly – Silicon Thin Film Transistor in a Source Follower Configuration
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A new evaluation method of the output voltage for the source follower composed of a LTPS TFT is proposed. This method provides an effective and more precise description about the unsaturated output voltage behavior of the source follower with a LTPS TFT. A new
Modeling and Simulation of Poly -crystalline Silicon Thin Film Transistor for Improved Gate Transport Efficiency
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In this work, a two-dimensional potential distribution formulation/model is presented for modified Schottky gate contact polycrystalline silicon thin film transistors. The work aims at deriving potential solution and in this way trying to limit the impact of punch-through
Ultra-low temperature poly -Si thin film transistor for plastic substrate
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Flexible displays on plastic substrates, using polycrystalline Si ( poly -Si)-based thin film transistor (TFT) devices to drive either active matrix liquid crystal displays (AMLCDs) or active matrix organic light emitting diode (AMOLED) displays are expected to be a driving
Fabrication and characterization of poly -Si vertical nanowire thin film transistor
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Abstract²In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented
Low temperature Aluminum induced crystallization process to get Poly -silicon films for thin film transistor application in active matrix displays
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The realization of high information-content active matrix flat-panel displays (FPDs) requires low temperature thin film transistor (TFT) process that is compatible with the thermal constraints imposed by common inexpensive glass panels. Aluminum induced
High Temperature Crystallized Poly -Si on Molybdenum Substrates for Thin – Film Transistor Application
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Abstract. Polycrystalline silicon thin film transistors ( poly -Si TFTs) are used in a wide variety of applications, and will figure prominently in the future high-resolution, high-performance flat panel display technology. However, it is difficult to fabricate high performance poly -Si TFTs at temperatures
Poly -crystalline Silicon Thin Film Transistor : a Twodimensional Threshold Voltage Analysis using Greens Function Approach
free download
A two dimensional treatment of the potential distribution under the depletion approximation is presented for poly crystalline silicon thin film transistors. Greens function approach is adopted to solve the two dimensional Poissons equation. The solution for the potential
2D Numerical Simulation and Modeling of High Performance Pentacene Organic Thin Film Transistor based on Poly (3-Dodecylthiophene- 5-Diyl) Dielectric
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Performance parameters are sarcastic to advance development of pentacene based organic thin film transistors (OTFTs). This paper presents design and numerical simulation of pentacene based organic thin film transistor with polymeric dielectric, Poly (3
A New Evaluation Method of the Threshold Voltage for a Low Temperature Poly -Silicon Thin Film Transistor in a Source Follower Configuration
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A new evaluation method of the output voltage for the source follower composed of a LTPS TFT is proposed. This method provides an effective and more precise description about the unsaturated output voltage behavior of the source follower with a LTPS TFT. A new
Fabrication of ultra thin film transistor base on poly (3-hexylthiophene)/F-4 TCNQ Langmuir-Blodgett film
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Organic films of few nanometers (a monolayer) are expectations as being useful components in many practical and commercial applications which are sensors, detectors, displays and FET [1-3]. An organic film can be deposited on a solid substrate using various
POLY -SI THIN FILM TRANSISTOR TECHNOLOGIES FOR LIQUID-CRYSTAL DISPLAY DRIVERS
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The fully integrated TFT based matrix LCD is the ultimate goal for flat panel displays. This paper discusses material and technologies to fabricate poly Si TFTs that have to meet the requirements for driving LCD matrices. With LPCVD, PECVD and e-gun evaporation poly Si
High-Performance Poly -Ge Thin – Film Transistor with NiGe Schottky Source/Drain
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T. Sadoh a H. Kamizuru, A. Kenjo and M. Miyao Department of Electronics, Kyushu University, Motooka, Fukuoka, Japan asadoh@ed.kyushu-u.ac.jp bmiyao@ed.kyushu-u.ac.jp Keywords: TFT, poly -Ge, Shottky S/D, system-in-display High-performance poly -Ge
Modeling and Simulation of Poly -crystalline Silicon Thin Film Transistor for Improved Gate Transport Efficiency
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In this work, a two-dimensional potential distribution formulation/model is presented for modified Schottky gate contact polycrystalline silicon thin film transistors. The work aims at deriving potential solution and in this way trying to limit the impact of punch-through
The Dependence of Deca-nanometre Poly -Si Thin Film Transistor Output Characteristics on the Grain Boundary Location
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Poly -Silicon thin – film transistors (TFTs) have been studied extensively in recent years for their application in flat panel active matrix liquid crystal displays (AMLCD). It has been suggested that the TFTs could be used for an integrated driving circuit of the display. To
Design and Analysis of Hybrid Operational Amplifiers Using Poly -Si Thin Film Transistor For Low Voltage Applications
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The design of Operational Amplifier in a new technique is presented in this paper, of a Hybrid Thin Film Transistor operational amplifier made by Poly Silicon thin film transistor and MOSFET which operates at 3V power supply. The Operational Amplifier designed is a two