Review on High Gain and High Performance N Polar GaN MIS HEMT at 30 GHz
The GaN HEMTs are well suited for receiver applications. But non linearities, such as third order inter modulation products can lead to signal distortion. Such non linearities are dominated by transconductance and its derivatives. A modified device structure of N polar GaN MIS HEMTs designed for high gain, have excellent linearity performance for low power receiver applications at 30 GHz. An OIP3 PDC of up to 15dB is demonstrated at 30 GHz using a vector receiver load pull system.
by Padmam Gopinath Kaimal “Review on High Gain and High Performance N-Polar GaN MIS-HEMT at 30 GHz”
Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-5 | Issue-1 , December 2020,
URL: https://www.ijtsrd.com/papers/ijtsrd38158.pdf
ugcjournallist, listofugcapprovedjournals, researchpublication