proximity effects for analog design
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Proximity Effects for Analog Design
two significant proximity effects, well
proximity and STI stress, as they relate to analog circuit
design. Device performance is impacted by layout features
located near, but not part of the device. This adds new complexities
to analog design. In either case, bias points can shift
by 20-30%, causing potentially catastrophic failures in circuits.
We show, for the first time, that a MOSFET placed close to a
well-edge creates a graded channel.
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