band gap reference research papers
A Bandgap Voltage Reference With Only MOS Transistors
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A Ribeiro, R Gama, T Costa, R Neves, N Horta ,av.it.pt
Abstract—The bandgap voltage reference (BGR) circuit is an important component of
Analog-to-Digital and Digital-to-Analog converters, which are broadly used in mixed-signal
and radio-frequency systems. Most BGR use bipolar junction transistors (BJT) to easily
Design of Bandgap Core and Startup Circuits for All CMOS Bandgap Voltage Reference
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S HONGPRASIT, SAN Worawat ,pe.org.pl
Abstract. This paper proposes a new self-biased op-amp’s startup circuit design and
improved bandgap core circuit for all CMOS bandgap voltage reference (BGR). In a
conventional BGR circuit, the startup circuit may be designed either be required an
A High Performance CMOS Bandgap Voltage Reference With Offset Compensation Technique
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G Siddula, A Sharma ,web2py.iiit.ac.in
Abstract—A high precision CMOS band-gap voltage reference which takes the advantage of
low power supply voltage and offset compensation is presented. In this method, the
proposed two feedback loops in the opamps will optimize the? VBE and hence the factor
CMOS Bandgap Voltage Reference
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M Savic , of ETRAN, Herceg Novi, Serbia and , 2003 ,leda.elfak.ni.ac.rs
Abstract–This paper presents an example of the CMOS bandgap voltage reference design.
Proposed circuit is evaluated with a set of simulations. Simulation results show the circuit
performance. Circuit exhibits the nominal temperature coefficient of 6 ppm/C, and dc
A Low Voltage Bandgap Reference Circuit with Current Feedback
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T Li, B Mitra ,EECS, 2003 ,eecs.umich.edu
Abstract—This paper describes the design of a bandgap reference, implemented in 0.25µm
CMOS technology. The circuit generates a reference voltage of 1.157 V and has a
temperature coefficient of 0.03 mV/K at 27C. It can operate with supply voltages between
A self-calibrated bandgap voltage reference with 0.5 ppm/? C temperature coefficient
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L Jin, H Xing, D Chen ,IEEE International Symposium on , 2006 ,see.ed.ac.uk
Abstract—This work introduces a multi-segment bandgap reference circuit with self-
calibration. Thermal characteristics of the bandgap circuit will be modeled using test results
under normal temperatures. With the characterization information, appropriate circuit
Statistical analysis and optimization of a bandgap reference for VLSI applications
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J Oehm ,Analog Integrated Circuits and Signal , 2001 ,Springer
Voltage and current references are widely needed for all kinds of integrated circuits, as most
applications require temperature-independent references with a high reproducibility in mass
production. For this purpose normally bandgap references are used. Though it is a
Sub 1 V CMOS bandgap reference design techniques: a survey
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CJB Fayomi, GI Wirth, HF Achigui ,Analog Integrated Circuits , 2010 ,Springer
Abstract This paper presents a review of constraints, limitation factors and challenges to
implement sub 1 V CMOS bandgap voltage reference (BVR) circuits in today’s and future
submicron technology. Moreover, we provide insight analysis of BVR circuit architectures
Temperature Coefficient of Diode-Connected LTPS Poly-Si TFTs and its Application on theBandgap Reference Circuit
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TC Lu, HW Zan, MD Ker, WM Huang, KC Lin ,2008 ,ics.ee.nctu.edu.tw
Abstract The temperature coefficient (TC) of n-type diode-connected polycrystalline silicon
thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the
activation energy is observed and explained. It is also found that TC is not sensitive to the
Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST’s) in 0.13 um CMOS Technology.
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V Gromov ,cern.ch
Abstract A CMOS bandgap voltage reference circuit, featuring dynamic-threshold MOS
transistors (DTMOST’s) has been developed in the 0.13 um CMOS technology. Insensitive to
temperature and power supply variations, this cell is going to be a key component for high
A curvature-corrected CMOS bandgap reference
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O Mitrea, C Popa, AM Manolescu ,Advances in Radio , 2003 ,adv-radio-sci.net
Abstract. This paper presents a CMOS bandgap reference that employs a curvature
correction technique for compensating the nonlinear voltage temperature dependence of a
diode connected BJT. The proposed circuit cancels the first and the second order terms in
Characterization of DTMOST Structures to be used in Bandgap Reference Circuits in 0.13 µm CMOS Technology.
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V Gromov ,2003 ,nikhef.nl
Abstract. This document describes objectives and method used to characterize DTMOST
structures in the 0.13 µm CMOS technology. The temperature dependence of the Id (Vgs)
relationship is measured and parameterized into a simple mathematical model. On the
A low drift curvature-compensated bandgap reference with trimming resistive circuit
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Z Ning ,Journal of Zhejiang University-Science C, 2011 ,Springer
Abstract A low temperature drift curvature-compensated complementary metal oxide
semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier
was employed to add compensation with a high-order term of TlnT (T is the
The Realization of an Area-Efficient CMOS Bandgap Reference Circuit with Less than 1.25 V of Output Voltage Using a Fractional VBE Amplification Scheme
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H Sakurai ,IEICE transactions on electronics, 2007 ,elect.chuo-u.ac.jp
SUMMARY This paper describes a CMOS voltage reference circuit which occupies small die
area and has less than 1.25 V of output voltage. The reference voltage is determined by a
resistor ratio, and it is possible to set the reference voltage from zero to near the supply
A Bandgap Reference with Simple Method for Improved PSR at Moderate Frequency
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B An ,amic.snu.ac.kr
Abstract—Bandgap reference circuits are significant analog block and PSR is the key
parameter that estimates the performance of these circuits. In this work, a simple method is
introduced to improve PSR at moderate frequency. Simulation results show that this
A High Precision Bandgap Reference Used in Power Management ICs
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G Shurong, W Xiaobo ,Engineering Letters, 2007 ,engineeringletters.com
Abstract—A 2.5 V high precision BiCMOS bandgap reference with supply voltage range of
6V to 18V was proposed and realized. It could be applied to lots of Power Management ICs
(Intergrated Circuits) due the high voltage. By introducing a preregulated current source,
A Multiple Time Programmable On-chip Trimming Technique for CMOS Bandgap ReferenceCircuits
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CH Wu, H Lin ,ee.nchu.edu.tw
The bandbap reference (BGR) circuits generating a constant voltage independent of
temperatures and supply voltages are widely used in many integrated circuits (IC), such as
non-volatile memories, analog to digital converters, power supplies, liquid crystal display (
A Smart Temperature Sensor with an Internal CMOS Bandgap Reference Circuit and Clock Oscillators
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SJ Kim, CK Lee, SH Cho, JI Lee ,icserv.kjist.ac.kr
Abstract This paper presents a CMOS smart temperature sensor having the temperature
resolution of 0.425?/LSB operating over the full standard industrial temperature range from-
40? to 125?. The designed temperature sensor has an internal bandgap reference
A 46.468 µW Low-Power Bandgap Voltage Reference
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M Yue ,feedback ,meeting.edu.cn
Abstract—A low-power CMOS bandgap voltage reference is designed. This bandgap
voltage reference adopted advanced startup circuit and sub-threshold technology. The
circuit is simulated under SMIC 0.18 µm CMOS process and 1.8 V supply voltage. The
Design of a High Performance Bandgap Reference Source Using CMOS Technology
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CRT de Mori, LLG Vermaas, RL Moreno ,pintassilgo2.ipen.br
Abstract This work describes the methodologies and criteria for the design of a bandgap
reference source. It discusses the definition of the reference source architecture,
characteristics of the operational amplifier, parasitic bipolar transistor biasing currents,
Compact, Curvature Corrected,-108dB PSRR High-Voltage Bandgap Reference Circuit with Intrinsic Overshoot Prevention
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Y Zhang, S Chun ,nwo.nl
Abstract—A compact, curvature corrected, high-voltage (HV) bandgap reference circuit with
high PSRR and intrinsic overshoot prevention is presented in this paper. The new HV
bandgap reference circuit fabricated in a 0.8 um bipolar, CMOS, DMOS (BCD), silicon on
A Low Noise CMOS Low Dropout Regulator with an Area-Efficient Bandgap Reference
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S Han, J Kim, KH Won ,IEICE transactions on electronics, 2009 ,hicsl.kw.ac.kr
SUMMARY In a low dropout (LDO) linear regulator whose reference voltage is supplied by a
bandgap reference, double stacked diodes increase the effective junction area ratio in the
bandgap reference, which significantly lowers the output spectral noise of the LDO. A low
A Clock Generating System for USB 2.0 with a High-PSR Bandgap Reference Generator
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JUN Young-Hyun ,SCIENCE AND TECHNOLOGY, 2011 ,imt.ro
Abstract. A 48-MHz clock generating system for USB 2.0 with an improved bandgap
reference generator is proposed to replace an external crystal oscillator. In order to comply
with clock frequency and long term jitter specifications under severe supply noise, the
Bandgap and current reference circuits
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W Sansen ,Analog Design Essentials, 2006 ,Springer
The accuracy of the output voltage depends on the accuracy of the resistor ratio and the
absolute accuracy of the reference voltage. This resistor ratio can have a smaller error than
0.1%(see Chapter 15), if they are large in area. The final accuracy will therefore depend
Bandgap Voltage reference in CMOS
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M Savic ,ELEKTRONIKA ELECTRONICS, 2004 ,electronics.etfbl.net
Abstract-This paper presents an example of the CMOS bandgap voltage reference design.
Proposed circuit is fabricated in CMOS 0.35 µm. Temperature variations of the reference
voltage are measured and the results are presented. Keywords–Bandgap reference, CMOS
Performance of the Bandgap Reference Circuit, designed in a commercial 0.13 um CMOS Technology.
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V Gromov ,11th Workshop on Electronics for LHC and Future , 2005 ,cern.ch
Abstract. A new all-MOS bandgap voltage reference circuit has been developed and
implemented in a standard 0.13-µm CMOS technology. The proposed circuit features
dynamicthreshold MOS transistors (DTMOST’s).
A Subthreshold MOSFET Bandgap Reference with Ultra-Low Power Supply Voltage
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Y Li, Y Wang, N Yan, X Tan ,homepage.fudan.edu.cn
Abstract A novel bandgap reference (BGR) with ultra low supply voltage is presented. The
proposed bandgap reference uses subthreshold MOSFETs to provide temperature
compensation. Analysis and comparison between proposed bandgap and conventional
A CMOS Bandgap Reference
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JM Park, T Jung ,eecs.umich.edu
Page 1. A CMOS Bandgap Reference Jong M. Park Taeil Jung Page 14. References [1] B. Razavi,
Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2001 [2] C. Jun and C. Guican, “A CMOS
Bandgap Reference Circuit,” IEEE J. of Solid-State Circuits, pp. 271-273, 2001
A LOW-NOISE LOW-POWER SECOND-ORDER COMPENSATED CMOS BANDGAP REFERENCE
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S Yuwono ,Jurnal Penelitian dan , 2004 ,ppm.ittelkom.ac.id
Abstract The design of a low-noise and low-power second-order bandgap reference voltage
source using a linear combination of two base-emitter voltages with only one scaling factor
is treated. The design takes into account the temperature dependency of the resistors and
Current Limit and Saturation Sense Bandgap Reference
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A low-impedance, sub-bandgap 0.6 µm CMOS reference with 0.84% trimless 3-s accuracy and- 30 dB worst-case PSRR up to 50 MHz
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V Gupta ,Analog Integrated Circuits and Signal , 2010 ,Springer
Abstract Modern mobile applications demand high performance from low supply voltages to
reduce power (extend battery life) and survive low breakdown voltages (imposed by sub-
micron CMOS technologies), which is why precise low-impedance sub-bandgap
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