# channel length of mosfet

**Study of gate line edge roughness effects in 50 nm bulk MOSFET devices**

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2. EFFECT OF GATE LER ON MOSFET IOFF AND ION This could bring several nm of effective channel length reduction and increase gate to source/drain overlap capacitance. It also leads to a doping profile that is less abrupt, which results in increased parasitic resistance.

**BSIM3v3. 2.2 MOSFET Model**

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BSIM3v3.2.2 considers the following physical phenomena observed in MOSFET devices : Non-uniform doping effect (in both lateral and vertical directions). • Mobility reduction due to vertical field. Drain-induced barrier lowering (DIBL). • Channel length modulation (CLM).

**A 3-D atomistic study of archetypal double gate MOSFET structures**

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Figure 2. ID-VG current characteristics for 10 and 30 nm channel length double-gate MOSFET, obtain from our classical and quantum simulations. reduction in the silicon body thickness, the quantum mechanical threshold voltage shift increases from ap- proximately 10 to 300

**Square root domain filter design and performance**

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An MTL loop contains an equal number of MOSFET gate-to-source voltages arranged clockwise (CW) and counterclock- wise Other second order effects which are likely to affect circuit performance include mobility reduction, channel-length modulation, and threshold voltage

**Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors**

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Schrdinger model (solid lines) and compared with simulated results presented in [21] (dotted lines) in which the non-equilibrium Green s function (NEGF) formalism is used to simulate the DG-MOSFET. It can be seen that the reduction of the channel length results in shifting

**Efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices**

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of gate biases) for a very aggressively scaled MOSFET with a 30 nm gate length and 2 1 V). Admittedly, the device is in need of extensive engineering to minimize short-channel effects be answered is whether the reduced DG current in Figure 6 is due to the reduction in channel

**Current-voltage characteristics from an asymptotic analysis of the MOSFET equations**

FREE DOWNLOAD cgu.edu Hence there has resulted a variety of approximate solutions. A typical MOSFET geometry is shown in Figure 1. The first approximation, which allows a reduction from a PDE system to As indicated, this approximation has validity when the channel length, L, is relatively large.

**A framework for generic physics based double-gate MOSFET modeling**

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due to channel length reduction and increase in drain bias, AVT can be formulated to account for the VT roll-off and D1BL. 5 POTENTIAL AND CHARGE DISTRIBUTION A complete model for circuit simulation includes the charge and capacitance model. In DG MOSFET, the

**Design of ion-implanted MOSFET s with very small physical dimensions**

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MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1 . It is known that reducing the source-to- drain spacing (ie, the channel length) of an For switching applications, the most undesirable short-channel effect is a reduction in the

**Investigation of gate-induced drain leakage (GIDL) current in thin body devices: single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-**

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These results can be explained by the reduction in transverse electric field at the surface of the drain and the increase in 1. Introduction As the metal oxide transistor field effect transistor (MOSFET) channel length is scaled down to 50nm and below, suppression of off-state

**Reduction of parasitic capacitance in vertical MOSFET s by fillet local oxidation (FILOX)**

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A further advantage of the vertical layout is the improved control of the source to drain region, includ- ing the channel length. Main disadvantage of the verti- cal MOSFET is the large overlap capacitance of the gate with source and drain and reduction of this capacitance is a

**Starting over: gm/ID-based MOSFET modeling as a basis for modernized analog design methodologies**

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Oriented Characterization of CMOS over the Continuum of Inversion Level and Channel Length, Proceedings of the [4] M. Bucher et al., The EPFL-EKV MOSFET Model Equations reduction (independent of L) and less velocity saturation (dependent on L) compared to NMOS.

**Can the density gradient approach describe the source-drain tunnelling in decanano double-gate MOSFETs?**

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We observe that as the channel length is reduced, there is a corresponding reduction in the 2000). The temperature dependence of the sub- threshold slope has also been studied, it is observed that temperature dependence of the 30 nm MOSFET is in agreement with

**MOSFET technology advances DC-DC converter efficiency for processor power**

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Using a proprietary fabrication process flow, the channel length is reduced and a thicker oxide is gate-drain capacitance (and hence gate-drain charge) and a lower channel resistance are This increase in efficiency along with die size reduction, when compared to the prior

**A Consistent Parameter E [traction Method for Deep SuEmicron MOSFETs**

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al. [4]. This technique however fails for deep submicron devices because of the reduction of the Purpose of this work is to describe a novel, efficient method, based on CV and IV measurements, to extract a consistent, bias independent channel and overlap length, the bias

**Optimizing effective channel length to minimize short channel effects in sub-50 nm single/double gate SOI MOSFETs**

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A variation of source/drain roll-off widths (s) along with lateral source/drain doping gradient (d) results in the modulation of effective channel length (Leff) in a nanoscale non-classical (gate underlap) single and double gate MOSFET.

**The impact of structural parameters on the electrical characteristics of nano scale DG-SOI MOSFETs in subthreshold region**

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The initial fast reduction in the drain current is due to the reduction in short channel SCEs) . Another word, increasing Lun results in an increase in effective channel length which in In this paper, we investigated the impact of structural parameters on DG-SOI MOSFET in the

**Stress modeling of nanoscale MOSFET**

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The reduction of backscattering implies the increase in average lifetime of a carrier before it is knocked- related to the mobility by Equation (1-2). As the channel length approaches zero, ?(0) This chapter started with the brief introduction of MOSFET scaling trends and the

**Guidelines for MOSFET device optimization accounting for L-dependent mobility degradation**

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Page 1. Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation Leff reduction = µeff reduction = µ0 reduction Lines : Y-function Symbols: Split CV 0 50 100 150 200 250 300 350 400 450 0.01 0.1 1 10 Effective channel length Leff (µm)

**An advanced surface potential-plus MOSFET model**

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to be a significant effect even though the supply voltage is scaled down according to channel length. relationship is substituted into Eq.(l) and simplified under the context of the channel charge core gate and quantum energy level in the inversion layer result in a reduction of the

**Analytical noise parameter model of short-channel RF MOSFETs**

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Index Terms-RF MOSFET, analytical modeling, channel thermal noise, small-signal modeling, noise parameters. I. INTRODUCTION Due to continuous reduction of minimum channel length in CMOS technologies in the recent years, CMOS has become a candidate for RF

**Comparison of non-equilibrium Green s function and quantum-corrected Monte Carlo approaches in nano MOS simulation**

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Although the donors are doped both in the source and drain regions, a nontrivial current reduction is found to be study between the non-equilibrium Green s function and quantum- corrected Monte Carlo approaches for a MOSFET with ten nanometers channel length.

**Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta I DDQ Testing**

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leakage currents is the MOSFET threshold voltage reduction as a result of CMOS technology scaling. Table 1 compares MOS- FET leakage current (IOFF), threshold voltage (VTH), power supply voltage (VDD), gate oxide thickness (TOX) and effective channel length (Leff) for

**MOSFET Simulation Using Matlab Implementation of the EKV Model**

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The simple mobility reduction (transconductance) model uses parameter THETA: P eff eff V L 2.4. Effective channel lengths The MOSFET effective channel length Leff is a very useful parameter for circuit design and simulation as well as for technology characterization.

**Non Overlapped Single and Double-Gate SOI/GOI MOSFET for Enhanced Short ChannelImmunity**

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Reduction of ?n reduces the minimum channel potential in a much efficient manner as compared to with lateral S/D doping gradient (d) results in the modulation of effective channel length (Leff) in a nanoscale non–classical (gate underlap) single and double gate MOSFET.

**Theory, development, and applications of the Advanced Compact MOSFET (ACM) model**

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Table II Parameters of the ACM MOSFET model Parameter; Description Unit VTO Zero mobility cm2/Vs VMAX Saturation velocity m/s THETA Mobility reduction parameter v- SIGMA Drain induced barrier lowering parameter m2 PCLM* Channel length modulation parameter

**Fabrication of 0.1 µm MOSFET with super self-aligned ultrashallow junction electrodes using selective Si1-xGex CVD**

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J Murota, M Ishii, K Goto, M Sakuraba ,Proc. of the 27th ,imec.be implanted device was large, com-pared with the same size S 3 EMOSFET by the effective channel length reduction due to in spite of the higher substrate concentration 5×10 17 cm -3 and the longer gate length 0.12µm(Fig.4). So it is clear that S 3 E- MOSFET with annealing

**Accurate compact MOSFET modeling scheme for harmonic distortion analysis**

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It is shown that some effects, such as velocity saturation and channel length modulation, make the shape of the 3rd derivative of a deep-submicron MOSFET very different from that where Leff is the effective channel length (including its reduction by channel length modulation

**Overview of an advanced surface-potential-based model (SP)**

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a physically meaningful alternative to the charge sharing approach to the threshold voltage reduction in short was developed in where it was verified using exact results for long- channel MOSFET s. 1 ) 1( ,?+= L L r CLM L where CLM L ? is used to introduce channel length

**Source/Drain Parasitic Resistance Role and Electrical Coupling Effect in sub 50nm MOSFETDesign**

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Fig. 5 illustrates that DIBL can be reduced with reduction of deep S/D junction depth (Xjc). (2). Specific contact resistance and contact electrode depth effect MOSFET channel resistance is reduced with scaled channel length, but on the other hand, the accordingly scaled

**perso.uclouvain.be/david.bol/papers/2008/Bol-FTFC08Channel length upsize for robust and compact subthreshold SRAM**

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In this contribution, we propose to increase MOSFET channel length in the conventional 6T SRAM cell to Two length upsizing schemes are proposed and we show that they lead to an efficient also show that the improved subthreshold swing yields a static power reduction by a

**HiSIM: selfconsistent surface-potential MOS model valid down to sub-100 nm technologies**

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Connection to Technology -Charge-Based Model -Surface-Potential-Based MOSFET Model -Impurity-Profile-Based Modeling Hiroshima-university STARC IGFET Model) ( of phonon scatteringof saturation velocity channel-length modulation: inclusion of lateral-electric field

**A computational exploration of lateral channel engineering to enhance MOSFET performance**

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Such short channel effects cause less effective gate modulation on the barrier top of HMGFETs, especially for those HMGFETs with short source gate length. The higher subband barrier tops result in the reduction of the ballistic on-current as indicated in Table 1. In the

**The impact of MOSFET s physical parameters on its threshold voltage**

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For short-channel device we will have reduction of the threshold voltage by ?Vt term compared with the long-channel device, which depends of: the length of channel (L), the junction depth (xj), drain diffusion doping (small effect) and drain-to-source voltage (VDS).

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