cmos lna low noise amplifier research paper

cmos lna low noise amplifier research paper


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A Wideband 0.18 µm CMOS LNA with RC-Feedback Topology for UWB Applications
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HL Kao, YC Chang, CH Wu, CH Kao, MH Chen ,zanran_storage.s3.amazonaws.com ABSTRACT A 0.18 µm CMOS low noise amplifier using RC-feedback topology is proposed with optimized matching, gain, noise, linearity and area for UWB applications. The IC prototype achieved 9.5 dB of average power gain, low 3.4 dB noise figure (NF),-9.2 dB input match,-

A Prototype Broadband CMOS LNA for Universal Radio Receivers
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N Poobuapheun ,bwrc.eecs.berkeley.edu The last few years have been a revolutionary period for wireless communications. With exponential growth in the area for years, now there are lots of wireless standards for various frequency bands. There have been many attempts to create a transceiver that can operate

Current reuse topology in UWB CMOS LNA
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T Thierry ,intechopen.com In February 2002, the Federal Communications Commission (FCC) gave the permission for the marketing and operation of a new class of products incorporating Ultra Wide Band (UWB) technology. The early applications of UWB technology were primarily radar related,

AN RF-CMOS LNA AND MIXER MERGED DESIGN STRATEGY
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- iberchip.net ABSTRACT Low Noise Amplifier and Mixer design considerations for 2.45 GHz Bluetooth applications have been studied. A detailed noise analysis is presented. A design strategy for an inductively degenerated common-source LNA with cascode transistor and current-

RF-CMOS LNA
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H KANAYA, Y KOGA, J FUJIYAMA, G URAKAWA ,yossvr0.ed.kyushu-u.ac.jp SUMMARY As an RF high Tc superconducting (HTS) front end for a microwave receiver, we propose a new design method for the broadband matching circuit composed of coplanar waveguide (CPW) meanderline resonators connecting a slot antenna with CMOS low

Design of Integrated CMOS LNA using Suspended MEMS Inductor for Wireless Applications
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H El Ahmady, A Zaki, H Elsimary ,wseas.us ABSTRACT The interest in low-cost, low-power, silicon-based transceiver designs for radio frequency (RF) applications, such as cell phones and wireless sensor networking, has prompted research in wireless circuit design techniques using complementary-metal-

0.18 µm CMOS LNA AND MIXER FOR WIRELESS LAN APPLICATIONS
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V Krizhanovskii, NT Kien ,naukainform.kpi.ua ABSTRACT Low Noise Amplifier (LNA) and mixer for 5.15-5.825 GHz wireless Local Area Network (LAN) applications were designed and fabricated in 0.18 µm CMOS technology. Newly proposed topologies are described. Simulation results for LNA are: Noise Figure (

Improving the Linearity of CMOS LNA Using the Post IM3 Compensator
FREE DOWNLOAD postech.ac.kr ABSTRACT In this paper, a new linearization method has been proposed for a CMOS low noise amplifier (LNA) using the Post IM3 Compensator. The fundamental operating theory of the proposed method is to cancel the IM3 components of the LNA output signal by generating

Design Report on RF Front-End Receiver in 0.35µm CMOS LNA and Mixer
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RM Guerreiro ,icdeap.org Page 1. PAPRICA: RF Front-End Design Story LNA and Mixer in 0.35µm CMOS In the RF section two blocks stand out both for their importance and for the challenge they presented in their design in CMOS, the LNA and the Mixer.

A 2.3-7GHz CMOS High Gain LNA Using CS-CS Cascode with Coupling C
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SUMMARY A fully integrated CMOS wideband Low Noise Amplifier (LNA) operating over 2.3–7GHz is designed and fabricated using a 0.18 µm CMOS process. The proposed structure is a common sourcecommon source (CS-CS) cascode amplifier with a coupling

Design and implementation of ultra-wide-band CMOS LC filter LNA
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J GAUBERT, M BATTISTA, O FOURQUIN ,intechopen.com Demand for low cost and high data-rate wireless communication systems is increasing. Since the FCC has authorized communication in the 3.1 GHz to 10.6 GHz frequency band, several technologies have been developed to satisfy the communication market. Typically,

Design of an LNA in 0.18 µm CMOS Technology with a Flat and High Gain Covering Full Ultrawideband for Low Power Applications
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ABSTRACT In this paper an ultrawideband low noise amplifier is proposed. The structure is based on 0.18 µm CMOS technology. The design is based on the current reusing structure to provide the wide band characteristics. A wideband flat gain (S21) about 20dB is

Design of a Multistandard LNA for DECT and Bluetooth in 0.18 J. lffi CMOS
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EHM Hanssen ,alexandria.tue.nl ABSTRACT In this master thesis, research is conducted on Low Noise Amplifier (LNA) topologies and matching concepts. The design is done in 0.18 J. lm CMOS-technology provided by National Semiconductors and using the Cadence Spectre RF simulation tool

LNA and mixer trade-offs across 1.5 GHz, 2.4 GHz and 3.2 GHz bands and CMOS and SiGe processes
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ABSTRACT LNAs and mixers are designed for various processes using a synthesis tool (NeoCircuit). RF design considerations such as impedance matching guided the selection of a LNA and mixer topology that could be simultaneously used for 1.5 GHz, 2.4 GHz and 3.2

Design of a 19-22GHz Wideband LNA in 0.13 µm CMOS Technology using Transmission Lines
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3 Page 4. ? To develop a wideband LNA in IBM 0.13µm CMOS technology using Cadence software [8] MK Chirala, X. Guan and C. Nguyen, DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors , Electronics Letters, Vol. 42, No. 22, pp.

LNA design in CMOS for 10 GHz g bandwidth
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MR Knutsen ,nano.project.ifi.uio.no Page 1. LNA design in CMOS for 10 GHz g bandwidth Mats Risopatron Knutsen, Master student Nanoelectronics group gp Dept. of Informatics University of Oslo University of Oslo Page 2. LNA design in CMOS for 10 GHz bandwidth • Challenges in the design of LNAs with

A 1.5 V 5.2 GHz LNA in 0.25 um CMOS Utilizing Inter-Stage Matching
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YC Hsu ,staffweb.ncnu.edu.tw ABSTRACT In this paper, a 5.2 GHz low noise amplifier in 0.25 um CMOS utilizing inter- stage matching is designed. Two realizations for a low value of inductor within the LNA are implemented. The measurement results are 7dB gain and 5.86 dB noise figure is

A Wideband LNA with an Excellent Gain Flatness for 60 GHz 16QAM Modulation in 65 nm CMOS
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Q Bu, K Okada ,ssc.pe.titech.ac.jp ABSTRACT In 60 GHz radios, at least 9 GHz flat gain is needed for the whole band for 16- QAM modulation. A 23 GHz 3 dB bandwidth, 6.3 dB to 17.5 dB variable gain, less than 4.3 dB NF,-7.7 dBm IIP3, four-stage common source LNA is proposed in this paper. The LNA

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