ENGINEERING RESEARCH PAPERS

LOW NOISE AMPLIFIER IEEE PAPER 2016




Multiband RF Low Noise Amplifier (LNA) base on Multi section Impedance Transformer for Multi frequency Application
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Abstract In this paper, multiband RF low noise amplifier (LNA) is designed and evaluated. This LNA has a center frequencies 0.95 GHz for GSM, 1.85 GHz for WCDMA, and 2.45 GHz for WLAN application. In order to work on multifrequency, this paper proposed the use of

DESIGN AND SIMLATION OF 0.18 M CMOS LNA
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ABSTRACT In this paper, 0.18 µm CMOS LNA for UWB systems has been simulated. The resistive-capacitive feedback is used to increase the stability of circuit. The value of S 21 is 26.577 dB at 8.894 GHz. The noise figure of the simulated circuit is 1.235 dB at 3.1 GHz.

A Bypass Circuit for 802.11 n RF LNA/Switch Module
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Abstract:In this paper, a new method is proposed to implement the bypass circuit for 802.11 n RF LNA/Switch modules. Unlike traditional method, which uses decoder for mode and RF switch control, this method adopts diodes only for controlling. Also, less than-10dB

ANALYSIS AND DESIGN OF A 3.1–10.6 GHZ WIDEBAND LNA IN 130-NM CMOS TECHNOLOGY
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ABSTRACT-This paper presents a wideband low-noise amplifier (LNA) based on the cascade configuration. Wideband input-impedance matching was achieved. While the wideband gain response was obtained using a post-transistor inductor. Theoretical

INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES RESEARCH TECHNOLOGY A REVIEW OF 2.4 GHZ LNA USING DIFFERENT TOPOLOGIES IN
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ABSTRACT This paper presents the literature review of various designs of LNA using different topologies. Designing very highperformance LNAs is an active research area and is of crucial importance for wireless technologies. CMOS LNA architectures can be divided

The Frequency, Time Design Analysis of Noise Figure Optimization of a Wideband PHEMT Hybrid LNA with Flat Gain for WiMAX Application
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ABSTRACT In this paper, the Noise figure optimization circuit configuration in PHEMT Hybrid LNA design. The optimal noise figure is achieved by minimizing the noise contributions by utilizing of LC resonance at input and output matching networks to

Energy-aware low-power CMOS LNA with process-variations management
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Abstract A reconfigurable low-noise amplifier (LNA) with digitally controllable gain and power consumption is presented. This architecture allows increasing power consumption only when required, ie to improve LNA's radio-frequency performance at extreme

CMOS Merged LNA and Mixer Circuit with Low Power Consumption For WBAN Applications
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ABSTRACT: A technique to enhance the circuit parameters like Linearity, Low power consumption, a circuit is proposed having Merged LNA (Low Noise Amplifier) and Mixer at high level of integration. This paper revisits the idea of sharing bias current to introduce a

Design and performance improvement of a low noise amplifier with different matching techniques and stability network
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Abstract:This paper proposes the design of a Low noise amplifier (LNA) for 5 to 6GHz range of frequency. The design of LNA plays an important role in the communication receiver as it has to amplify the received signal without adding much noise. The

Design of 5.2-GHz Low Noise Amplifier for Wireless LAN
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Abstract This paper presents 5.2-GHz Low Noise Amplifier (LNA) for 802.11 a wireless local area network (WLAN) application. The proposed circuit is fabricated using 0.18 µm SiGe HBT BiCMOS technology, and it is powered by 1V supply. To increase voltage gain, this

Low Noise Amplifier Selection for Indian Regional Navigation Satellite System
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Abstract Indian Regional Navigation Satellite System (IRNSS) is a indigenous and autonomous satellite navigation system being developed by Indian Space Research Organization. IRNSS operates in two frequency bands namely L band (1176.45 MHz) and

Multiband RF Low Noise Amplifier (LNA) base on Multi section Impedance Transformer for Multi frequency Application
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Abstract In this paper, multiband RF low noise amplifier (LNA) is designed and evaluated. This LNA has a center frequencies 0.95 GHz for GSM, 1.85 GHz for WCDMA, and 2.45 GHz for WLAN application. In order to work on multifrequency, this paper proposed the use of

A Novel Ultra-Broad Band, High Gain, and Low Noise Distributed Amplifier Using Modified Regulated Cascode Configuration (MRGC) Gain-Cell
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Abstract In this paper, an ultra-broad bandwidth, low noise, and high gain-flatness CMOS distributed amplifier (CMOS-DA) based on a novel gain-cell is presented. The new gain-cell that enhances the output impedance as a result the gain substantially over conventional

A Low Noise Two Stage Operational Amplifier on 45nm CMOS Process
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Abstract–A new low voltage and low power two stage operational amplifier which describes different parameters as Gain, Phase margin, Noise, SFDR and THD under 45nm CMOS technology. Implementations have been done in Tanner EDA software V14. 1. Circuit

Design and Simulation of a Low-Noise Amplifier with Low Power Consumption and High Gain in 2.4 GHz Frequency for Wireless Systems
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(1) MSc.–Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Esfahan, Iran iaun. karimi@ gmail. com (2) Associate Professor-Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Esfahan,

CMOS Low Noise Amplifier for IEEE 802.11 b Wireless LAN Applications
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Abstract This paper describes a CMOS LNA for IEEE 802.11 b front-end receiver for wireless LAN applications in a TSMC 0.18-µm process. The Front-end LNA specifications are derived from IEEE 802.11 b standard. In this paper, we have designed a fully integrated CMOS

Design and Implementation of A High Linearity Low Noise Amplifier for 1.57 GHz GPS Applications
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Abstract:Linearity is one of the most important design parameters for an LNA together with noise, gain and stability. As further technological improvements require high linearity amplifiers, different considerations have been enhanced. With the consideration of emitter

CMOS Low-Noise Amplifier for 2.4-GHz Wireless Receivers
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(LNA) intended for use in receiver system. The design has been done in 180nm technology using CMOS. The proposed LNA uses inductive degeneration technique. This amplifier provides a forward gain of 15.72 dB with a low noise figure of. 307dB while drawing 6.5