A 50 to 70 GHz power amplifier using 90 nm CMOS technology
FREE-DOWNLOAD JL Kuo, ZM Tsai, KY Lin… – Microwave and Wireless …, 2009
A 50 to 70 GHz wideband power amplifier (PA) is de- veloped in MS/RF 90 nm 1P9M
CMOS process. This PA achieves a measured sat of 13.8 dBm, 1 dB of 10.3 dBm, power added
ef- ficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under DD biased at