cmos vlsi IEEE PAPER 2017
Design and Implementation of Enhanced Leakage Power Reduction Technique inCMOS VLSICircuits
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Abstract The rapid increase of semiconductor technology and growing demand for portable devices powered up through battery has led the constructors to scale down the feature size; resultant reduced threshold voltage as well as thereby enabling integration of incredibly
Leakage Power Reduction Techniques for NanoscaleCMOS VLSISystems and Effect of Technology Scaling on Leakage Power
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Abstract The rise in technology has demanded the use of more and more components on chip. This rise has led to rise in power dissipation and a major challenge for circuit designers. Due to scaling, the reduction of threshold voltage inCMOScircuits increases the
Low Power Consumption UsingCMOS VLSIDesign in Modern Trends
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The revolution of wireless communication, portable and mobile devices has consistently demanding the designer to design the device for low power consumption. Power loss becomes a main parameter of integrated circuits, particularly for portable computers and
CMOSnanoelectrode array for all-electrical intracellular electrophysiological imaging
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Developing a new tool capable of high-precision electrophysiological recording of a large network of electrogenic cells has long been an outstanding challenge in neurobiology and cardiology. Here, we combine nanoscale intracellular electrodes with complementary metal-
Design and Implementation of Enhanced Leakage Power Reduction Technique inCMOSVLSI Circuits
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Abstract The rapid increase of semiconductor technology and growing demand for portable devices powered up through battery has led the constructors to scale down the feature size; resultant reduced threshold voltage as well as thereby enabling integration of incredibly
Design and Analysis ofCMOSbased Low Power Carry Select Full Adder
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ABSTRACT:-Carry Select Adder (CSLA) is trusted to be one of the most speedster adders used in many data-processing processors to achieve faster arithmetic functions. From the structure of the CSLA, it is predicted that there is scope for reducing the area and power
Modeling theCMOSInverter using Hybrid Systems
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We are currently trying to determine the analog output of aCMOSinverter (see Figure 1) based on the analog input with as little effort as possible. Unfortunately an accurate formula Vout (Vin) can not be derived for the whole voltage range because the inverter, or more
A Fully Integrated Dual-Band WLPCMOSPower Amplifier for 802.11 n WLAN Applications
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Abstract A fully integrated dual-bandCMOSpower amplifier (PA) is developed for 802.11 n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output Abstract The control area network (CAN) wired communi-cation standard is becoming the bus of choice for many space applications. However, the severe− 2 to 7 V common-mode and− 3 to 16 V failure tolerance requirements of the CAN bus driver have restricted its
Nano Power Current Reference Circuit consisting of Sub-thresholdCMOSCircuits
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ABSTRACT This paper proposes a low voltageCMOSNano power current reference circuit and presents its performance with circuit simulation in 180-nm UMCCMOStechnology. The proposed circuit consists of start-up, Bias-voltage, currentsource sub-circuits with most of the
A Review on Pipe Line Analog to Digital Converter using 0.18 µmCMOSTechnology
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ABSTRACT This work describes a 12-bit pipeline ADC (Analog-to-Digital Converter) for CMOS(Complementary Metal Oxide Semiconductor) that is implemented in a TSMC 0.18 μmCMOSprocess. The proposed ADC utilizes the Threshold Inverter Quantization (TIQ) The point where wireless communication and ubiquitous connectivity became an essential part of our lives is already past. Generation after generation communication speed is being taken to unprecedented levels, requiring both state-of-the-art hardware and software to
Low Power Full Adder Circuit Design Using Two Phase Adiabatic StaticCMOSLogic
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Abstract: Adiabatic logic is used to minimize the energy loss during operation of the circuit. Using two-phase adiabatic staticCMOSlogic (2PASCL) the power consumption can be reduced. This paper compares the power consumption of Static Energy Recovery Full Adder Abstract This paper presents aCMOSsmart temperature sensor using a switched Vernier time-to-digital converter (SVTDC) to achieve an energy-efficient temperature sensing. The proposed temperature sensor employs two switched ring oscillators (SROs), of which the
8.25 μm Pitch 66% Fill Factor Global Shared Well SPAD Image Sensor in 40nmCMOSFSI Technology
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Abstract We present the first single photon avalanche diode (SPAD) device and image sensor realized in a customized 40nmCMOSfront side illuminated (FSI) technology. The 96× 40 array utilizes a global shared well layout structure with up to 66% fill factor at 8.25 µm
Power Reduction through Different Low PowerCMOSTechnique in Power Gating Switch
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ABSTRACT In this thesis has introduced two new techniques for lowCMOSswitch circuit design techniques as Lector technique and Galeor technique for reducing the leakage power dissipation inCMOSswitch circuit. low powerCMOSswitchs are performance CMOSintegrated circuit design for wireless power transfer intends to report the state-of-the art analog and power management IC design techniques for various wireless power transfer (WPT) systems. To propose elaborate power management solutions, the circuit designers The future is the Internet of Things (IoT) and it is already here, eg, in the environmental monitoring, in the manufacturing, and in the building and home automation. By the technology of IoT, there have been millions of mobile devices that are collecting data and Investigation of post processing resistivity modification for HV- CMOSpixel detectors
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When a minimum ionising particle (MIP) passes through a semiconductor material, it will excite electrons creating electron-hole pairs (electrons as green arrows below). An external bias voltage increases the depletion region. In this region the current pulse is dominantly Broadband IQCMOStransceivers for compact and ultra-compact NMR probes
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CMOStechnologies allow for the miniaturization of the electronics needed for a pulsed NMR probe. Recently, use of single-chip transceivers was demonstrated for both compact NMR tools implementation and realization of ultra-compact high sensitivity sub-nL probes [1-4].
Design and Implementation of Two StageCMOSOperational Amplifier
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Abstract-A method for fabricating and implementing a Two StageCMOSOperational Amplifier using Cadence Virtuoso 180nm Technology is presented in this paper. The proposedCMOSop-amp is designed for 1.8 V power supply. Op-Amp is basically a DC-
A High Data Rate, High Output Power 60 GHz OOK Modulator in 90 nmCMOS
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Abstract In this paper, we present a 60 GHz on-off keying (OOK) modulator in a 90 nm CMOS . The modulator employs a current-reuse technique and a switching modulation for low DC power dissipation, high on/off isolation, and high data rate. The measured gain of
A Simple Static Noise Margin Model of MOS CML Gate inCMOSProcesses
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Abstract This paper presents a simple noise margin (NM) model of MOS current mode logic (MCML) gates especially inCMOSprocesses where a large device mismatch deteriorates logic reliability. Tradeoffs between speed and logic reliability are discussed,
Design and Evaluation of aCMOSImage Sensor with Dual-CDS and Column-parallel SS-ADCs
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(CIS) with dual correlated double sampling (CDS) and column-parallel analog-to-digital converter (ADC) and its measurement method using a fieldprogrammable gate array (FPGA) integrated module. The CIS is composed of a 320 x 240 pixel array with 3.2 μm x 3.2 μm
ACMOS -based Temperature Sensor with Subthreshold Operation for Low-voltage and Low-power On-chip Thermal Monitoring
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Abstract ACMOS -based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator Abstract. Latest nanometerCMOStechnology nodes have highlighted new issues in security of cryptographic hardware implementations. The constant growth of the static power consumption has led to a new class of side-channel attacks. Common attacks exploiting
A 12-bit 2.88 mW 50MHz SAR ADC in 0.18 μmCMOS
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Abstract In this paper a 12-bit 2.88 mW 50MHz SAR ADC implemented in 180nmCMOS process is presented. A differential split CDAC is adopted which eliminates mismatch of the capacitors. A high-speed and highresolution dynamic latch comparator is designed to save
CMOSAnalog Integrate-and-fire Neuron Circuit for Driving Memristor based on RRAM
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Abstract We designed theCMOSanalog integrate and fire (I F) neuron circuit for driving memristor based on resistive-switching random access memory (RRAM). And we fabricated the RRAM device that have HfO2 switching layer using atomic layer deposition (ALD). The
Analysis and Design of a Low Power and Wide Tuning Range Voltage-Controlled Ring Oscillator in 45 nmCMOSProcess
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Abstract This Paper reports on design and analysis ofCMOSVoltage Controlled Ring Oscillator (VCRO) based on the delay cells proposed by Changzhi Li and Jenshan Lin. The two stageCMOSVCRO exhibits very low power consumption and wide tuning range when
Low NoiseCMOSTemperature Sensor with On-Chip Digital Calibration
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In this paper, we present a low-noiseCMOStemperature sensor with an on-chip digital calibration circuit. The low-voltage bandgap reference circuit is designed to generate current proportional to absolute temperature (PTAT) using a parasitic NPN bipolar junction transistor
High Performance Spin-Orbit-Torque (SOT) Based Non-volatile Standard Cell for HybridCMOS /Magnetic ICs
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Abstract Spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is an emergent spintronics device with a promising potential. It resolves many issues encountered in the current MTJs state of the art. Although the existing Spin Transfer Torque (STT) technology is
A CURRENT MIRROR BASED TWO STAGECMOSCASCODE OP-AMP FOR HIGH FREQUENCY APPLICATION
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Abstract This paper presents a low power, high slew rate, high gain, ultra wide band two stageCMOScascode operational amplifier for radio frequency application. Current mirror based cascoding technique and pole zero cancelation technique is used to ameliorate the
Characterization of 6TCMOSSRAM in 65nm and 120nm Technology using Low power Techniques
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Abstract-As the channel length of MOSFETs is scaling down, the Power dissipation of the SRAM cells become the major concern for future technology. In this paper, stable SRAM cells power dissipation reduction in 6T static random access memory (SRAM), is described Impulse-based ultra-wideband (UWB) systems, notably unlicensed UWB systems operating across or within 3.1 10.6 GHz, are unique systems possessing many desired characteristics, owing to the transmission and reception of only a single signal having pulse
LinearCMOSPower Amplifier for WiMAX Application
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AbstractCMOSpower amplifier is field of interest of developers now a days due to high demand of mobility requirement with higher data transfer speed. Pas are the most power consuming part and main contributor in transceiver chain. Since we have limited power
A Switched VCO-basedCMOSUWB Transmitter for 3-5 GHz Radar and Communication Systems
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Abstract A switched VCO-based UWB transmitter for 3-5 GHz is implemented using 0.18 μmCMOStechnology. Using RF switch and timing control of DPGs, the uniform RF power and low power consumption are possible regardless of carrier frequency. And gate control of Simulation tutorial on HV/HR- CMOSTCAD and Geant4 simulations
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The AIDA-2020 Advanced European Infrastructures for Detectors at Accelerators project has received funding from the European Unions Horizon 2020 Research and Innovation programme under Grant Agreement no. 654168.This work is part of AIDA-2020 Work Package 6: Novel Almost on a daily basis, nanoeletronic metal-oxide-semiconductor ( CMOS ) technology and device design are introduced and explored in rapidly developing semiconductor industry. This book3D TCAD Simulation forCMOSNanoeletronic Devicespresents a self-contained
CMOSVDIBAs-Based Single-Resistance-Controlled Voltage-Mode Sinusoidal Oscillator
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Abstract In this communication, a new single-resistance controlled sinusoidal oscillator (SRCO) has been presented. The presented SRCO uses two voltage differencing inverting buffered amplifiers (VDIBAs), one resistor and two capacitors in which one is grounded (GC)
Millimeter-waveCMOSTransceiver Techniques for Automotive Radar Systems
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Recently, advanced driver assistance systems (ADAS) with the keyword ofsafetyhave attracted attention in the world. Many mega-suppliers (Tier 1) and the others have been carrying out development for safe systems using cameras, lasers, and millimeter-wave radar
An Analysis of NovelCMOSRing Oscillator Using LECTOR Technique with Minimum Leakage
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ABSTRACT when we require developing digital integrated circuits, then we are facing many challenges like the way of greater energy consumption. The mixture of minor procedure geometries, greater functional integration and higher clock speed shave contributed to
CMOS120 GHz Phase-Locked Loops Based on Two Different VCO Topologies
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Abstract This work describes the development and comparison of two phase-locked loops (PLLs) based on a 65-nmCMOStechnology. The PLLs incorporate two different topologies for the output voltage-controlled oscillator (VCO): LC cross-coupled and differential Colpitts. Dear editor, It becomes practical to implement competitive mm-wave circuits in advanced deep-submicronCMOSprocess, with the scalingCMOStechnology and innovative circuit techniques. Among various mm-wave circuit blocks, the oscillator draws special attention
A Low Power and Linear Voltage Controlled Oscillator Using HybridCMOS -CNFET Technology
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Abstract This paper presents a hybridCMOS -CNFET voltage controlled oscillator (VCO) with low power dissipation and linear response over a wide control voltage range. The hybrid circuit is based on PTM 32nm low powerCMOSdevices and 32nm CNFET devices with
Exploration on Power Delay Product of Basic Logic Gates for VariousCMOSLogic Styles
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Abstract Since Power dissipation is one of the important criteria in Low power VLSI design, Chip designers are making lot of efforts to reduce the power dissipation. The power efficiency of any architecture can be explained in terms of power delay product. The circuit
Novel Pass-transistor Logic based Ultralow Power Variation ResilientCMOSFull Adder
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Abstract This paper proposes a new full adder design based on pass-transistor logic that offers ultralow power dissipation and superior variability together with low transistor count. The passtransistor logic allows device count reduction through direct logic realization, and
ACMOSMorlet Wavelet Generator
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Abstract. The design and characterization of aCMOScircuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a low power consumption, improve standard deviation (σ) control and also have a small form factor. A
CMOSBridge Rectifier (CBR) using 0.18 Micron Technology for Energy Harvesting Applications
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Abstract-In this work, an input-powered AC/DCCMOSbridge rectifier (CBR) is proposed using 0.18 µmCMOSprocess. It is based on a simple bridge connected full wave rectifier, without an external dc voltage to turn-ON. The rectifier may be used for energy harvesting
Design of Digital Circuits for ECG Data Acquisition System Using 90nmCMOSTechnology
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ABSTRACT Day by day the scopeuse of the electronics concepts in bio-medical field is going to increase step by step. Electrocardiogram (ECG) is basically a non-invasive way of measuring the electrical activity of the heart by registering the extracellular potentials
Fixed Pattern Noise pixel-wise linear correction for crime scene imagingCMOSsensor
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ABSTRACT Filtered multispectral imaging technique might be a potential method for crime scene documentation and evidence detection due to its abundant spectral information as well as non-contact and non-destructive nature. Low-cost and portable multispectral crime
ACMOSTracking System Approach for Cell Motility Assays.
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Abstract: This work proposes a method for studying and monitoring in real-time a single cell on a 2D electrode matrix, of great interest in cell motility assays and in the characterization of cancer cell metastasis. ACMOSsystem proposal for cell location based on occupation maps
Design of Multiplier using Low PowerCMOSTechnology
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ABSTRACT The paper presents a low Power consumption plays a vital role in the present day VLSI technology. Power consumption of an electronic device can be reduced by adopt changed design styles. Multipliers play a most important role in high concert systems. This
Design of DPLL Using Sub-Micron 45 nmCMOSTechnology and Implementation Using Microwind 3.1 Software
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Abstract: Digital Phase locked loop (DPLL) is one of the most important devices in almost all the electronic systems. This paper introduces the design of DPLL using sub-micron 45nm CMOStechnology and implemented using microwind 3.1 software. The Software microwind
Improved Two Phase Clocked Adiabatic StaticCMOSLogic Circuit
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ABSTRACT This paper proposes an improved Two Phase Clocked Adiabatic StaticCMOS logic (2PASCL) circuit. The proposed circuit is based on energy recovery adiabatic principle which consumes less power. The number of transistor required in proposed circuit is same
Dual mode 4th order active-RC low-pass filter with tunable cut-off frequency from 3 MHz to 20 MHz in 65 nmCMOS
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Abstract. In this paper, a 4th order active-RC filter with two approximation modes and a tunable bandwidth from 3 MHz to 20 MHz is presented. The filter can be configured to achieve maximally flat in-band magnitude or phase response by using a dual mode resistor
COLUMN LEVEL TWO-STEP MULTI-SLOPE ANALOG TO DIGITAL CONVERTER FORCMOSIMAGE SENSORS
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The design is realized for pixel pitch of 6.7 µm. Power consumption per column ADC is 88 µW and sampling speeds larger than 50kS/s is supported. The prototype IC generates timing and biasing signals on its own. Using SPI interface, bias voltages can be trimmed with the
Radiation Tolerance Evolution ofCMOSIntegrated Circuits
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Abstract: One of the main causes of environmental damage to the electronic components that have to operate in space missions has been historically the space radiation. This has determined the need to apply special conditions in the design, manufacture and qualification Bilateral Dual-Frequency-Combs-Based 220-to-320GHz Spectrometer in 65-nmCMOSfor Gas Sensing
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Millimeter-wave/terahertz rotational spectroscopy offers an ultra-wide detection range of gas molecules for chemical and biomedical sensing. The linewidth of the absorption spectrum, limited by the Doppler effect of molecules, has a quality factor near 106, indicating absolute
Design of Ultra Low PowerCMOSInverter
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Abstract: The major concern in the designing of low power designs are energy consumption and design flexibility. Power dissipation, delay and area can be reduced with the help of scaling technology. Now a day the devices with ultra low power and area efficient designs
Delay Depreciation and Power efficient Carry Look Ahead Adder usingCMOS
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Adder is the major component in all data path unit. In this paper, designing of fast adder has been done by carry look ahead adder instead of ripple carry adder. Since the RCA has worst propagation delay of carry bit. Power and area remain the main constraint in designing of
A PIONEER APPROACH TO MITIGATE LEAKAGE POWER INCMOSCIRCUIT
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ABSTRACT In this fast growing age of semiconductor technology, the research field has been entered in nano-scaled or ultrathin regime. Various microcontroller based digital devices are required efficient switching speed, better noise immunity and minimum power
INTERNATIONAL JOURNAL OF ENGINEERING SCIENCESRESEARCH TECHNOLOGY IMPROVEMENT IN NOISE AND DELAY IN DOMINOCMOSLOGIC
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ABSTRACT New experiments are always welcomed in the field of chip designing in VLSI technology. VLSI is advanced innovation over solid state devices and is based onCMOS designing.CMOSis a combination of PMOS and NMOS. TheCMOStechnology is mostly
Design of a 1GHz Voltage Control Oscillator for PLL using 0.18 µmCMOSTechnology
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ABSTRACT This paper presents a design technique of efficient wide frequency range voltage control oscillator (VCO). An implementation of five stageCMOSVCO in Tanner S Edit environment with high oscillation frequencies for different input control voltage (DC)
How to Design Battery-Assisted Photovoltaic Switched-InductorCMOSCharger Supplies
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Abstract Wireless microsensors can sense and share data that can save lives, energy, and money. Recharging or replacing thousands of tiny, easily exhaustible batteries, however, is too costly. Fortunately, photovoltaic (PV) cells can generate 100× more power from sunlight Supporting Information: Visible Wavelength Color Filters using Dielectric Subwavelength Gratings for Backside-illuminatedCMOSImage Sensor Technologies
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Figure S2: RCWA simulations of the angular dependence of the transmission spectra under unpolarized light illumination for the two cases:(a) with and (b) without SiO2 spacers). The figures indicate that the angular dependence mainly arises from the angular response of the
Evaluation of Inverter Reliability Performance Due to Negative Bias Temperature Instability (NBTI) Effects in AdvanceCMOSTechnology Nodes
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ABSTRACT Negative bias temperature instability (NBTI) is the most concern issueCMOS devices with the scaling down of theCMOStechnologies. NBTI effect contributes to P MOSFET device degradation which later reduce the performance and reliability ofCMOS
Modeling of aCMOSConvective Accelerometer for HDL integration
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Abstract This paper introduces an analytical modeling of a convection heatCMOS accelerometer. The modeling approach relies on the use of fundamental results and is validated using both experimental data issued from test vehicles and FEM analysis. Since
DESIGN OF LOW POWER SAR ADC FOR ECG USING 45nmCMOSTECHNOLOGY
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ABSTRACT Design of a low power Successive Approximation Register Analog to Digital Converter (SAR ADC) in 45nmCMOSTechnology for biopotential acquisition systems is presented. It is designed by using a high threshold voltage (Vt) cell to reduce power Muon-Drift-Tubes detectors is hereby presented (defined 8xAFE). The system is composed by the cascade of the analog signal processing Front-End and of the Wilkinson A/D, performing both Time-over-Threshold (ToT) and charge measurement. The sensitivity at the
CMOSAND DTMOS SENSE AMPLIFIER FOR SRAM APPLICATION
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Abstract: In this paper comparison betweenCMOSand DTMOS amplifiers for SRAM application using 180nm technology is done. The tool used for simulation is Cadence Tool. The power dissipation varies with variation in supply voltage. The delay and average power
A Multi-phase VCO Quantizer based Adaptive Digital LDO in 65nmCMOSTechnology
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Abstract A digital low-dropout (DLDO) voltage regulator circuit is proposed utilizing a multi phase VCO based time quantizer. This high-resolution quantizer requires much lower sampling clock frequency compared to the previously proposed 1-bit comparator based
A 0.5 e-rms Temporal-NoiseCMOSImage Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain
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Abstract This paper introduces a proof-of-concept low-noiseCMOSimage sensor (CIS) intended for photon-starved imaging applications. The proposed architecture is based on a charge-sampling pixel featuring in-pixel amplification to reduce its inputreferred noise. With
A REVIEW ON PIPE LINE ANALOG TO DIGITAL CONVERTER USING 0.18 µmCMOSTECHNOLOGY
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ABSTRACT This paper describes a 12-bit pipeline ADC (Analog-to-Digital Converter) for CMOS(Complementary Metal Oxide Semiconductor) that is implemented in a TSMC 0.18 μmCMOSprocess. The proposed ADC utilizes the Threshold Inverter Quantization (TIQ)
Design of aCMOSOR Gateusing Artificial Neural Networks (ANNs)
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Abstract:-This paper is an approach to simplify the electronic circuits by using Complementary Metal Oxide Semiconductors ( CMOS ) transistors and map those to equivalent Artificial Neural Networks (ANNs). The implementation of those circuits in ANN
Leakage Power Reduction Techniques for NanoscaleCMOSVLSI Systems and Effect of Technology Scaling on Leakage Power
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Abstract The rise in technology has demanded the use of more and more components on chip. This rise has led to rise in power dissipation and a major challenge for circuit designers. Due to scaling, the reduction of threshold voltage inCMOScircuits increases the
A Low Phase Noise Wide Tuning RangeCMOSDifferential Ring Voltage Controlled Oscillator for Signal Processing
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Abstract-This paper presents a detailed two stage ring oscillator inCMOSstandard 45nm technology. This VCO operates in the range of 2.5 GHz to 7.7 GHz. Along with that low phase noise and low power consumption is estimated in this circuit. It operates at very low
A photonic interconnect layer onCMOS
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Abstract We propose and demonstrate a photonic interconnect layer consisting of heterogeneous microdisk lasers and microdetectors integrated with a nanophotonic silicon waveguide circuit. The photonic layer is fabricated using waferscale processes and a die-to-
An Ultra-Wide-Band 2.66-3.75 GHz LNA in 0.18-µmCMOSRadio Frequency
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Abstract An Ultra-Wide-Band Low Noise Amplifier is designed in this work. The designed LNA is of two stages that may be used in various applications in communication systems. The designed LNA is simulated by HSPICE in 0.18-μmCMOSRadio Frequency technology.
Design of 16 bit 180nmCMOSFully Segmented DAC
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Abstract: Due to increasing advancement in technology in the field of digital signal processing, data converters such as analog to digital converters and digital to analog converters with high resolution are profoundly required but problem with incorporating these CSE PROJECTS