cmos vlsi 2021
Dielectrophoretic manipulation of yeast cells using CMOS integrated microfluidic
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The rapid detection of infectious diseases is still an unsolved problem since their identification must be carried out either by cultivation or DNA analysis in a laboratory. The development of point-of-care (PoC) is a current development trend that requires further
Design and simulation of a novel dual current mirror based CMOS ‐MEMS integrated pressure sensor
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This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOSMEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and 5
Design and Power Dissipation Consideration of PFAL CMOS v/s Conventional CMOS based 2: 1 Multiplexer and Full Adder
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Increasing transistor switching time and rising count of transistors integrated over a chip area has given a high pace in computing systems by several orders of magnitude. With the integration of circuits, number of gates and transistors are increasing per chip area. CMOS
Design and Simulation of a Low Power and High-Speed 4-Bit Magnitude Comparator Circuit using CMOS in DSch and Microwind
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In this paper, we explained how to develop a 4-bit comparator circuit at the Complementary Metal Oxide Semiconductor ( CMOS ) technology nodes of 90 nm, 65 nm, and 45 nm, draw the logic diagram from the Boolean expression and the truth table of the logic circuit, find the
Integrated silicon carbide modulator for CMOS photonics
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The electro-optic modulator encodes electrical signals onto an optical carrier, and is essential 15 for the operation of global communication systems and data centers that society demands1. An 16 ideal modulator results from scalable semiconductor fabrication and is
Performance Analysis of a Loadless 4T SRAM Cell for different CMOS Technologies
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The purpose of this paper is to reduce the area and power of the SRAM (Static Random Access Memory) array while maintaining the excellent performance. The various configuration of SRAM cell array is designed using both the six-transistor (6T) SRAM cell
Estimation of Write Noise Margin for 6t SRAM Cell in CMOS 45nm technology.
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For high speed application the static random access memory is mostly demandable. Such kind of device should possess additive parameters that can withstand during transistor scaling process. Their exist static noise margin (SNM) which degrades the device
Fruit Degradation Detection System using CMOS Color Sensor
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Fruits and vegetables have been a significant part of the human diet for the last many years. In the modern age, with the increase in disease variants, people have become more curious about natural and organic nutrition. In this current situation the thought has brought someIn this paper, an optimized design of a 0.8µm CMOS class AB power amplifier is presented. The optimization is carried out using a simulation-based optimizer whose kernel is based on genetic algorithms (GA). The PA delivers 20.1 dBm of output power to 50 Ω load with an
Characterization and Separation of Live and Dead Yeast Cells Using CMOSBased DEP Microfluidics. Micromachines 202 1 270
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This study aims at developing a miniaturized CMOS integrated silicon-based microfluidic system, compatible with a standard CMOS process, to enable the characterization, and separation of live and dead yeast cells (as model bio-particle organisms) in a cell mixture
CMOS inductor design features for LTE devices
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This work is devoted to some aspects of the development of planar elements of the microwave path, which are used in the design of low-noise LTE range amplifiers, namely inductors, for further employment as part of the NB-IoT transceiver. General theoretical
Design, Simulation and Comparative Analysis of Performance Parameters of a 4-bit CMOS based Full Adder Circuit using Microwind and DSch at Various
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IOSR Journal of VLSI and Signal Processing (IOSR-JVSP) Volume 1 Issue Ser. I (Jan. Feb. 2021), pp. 01-08 e-ISSN: 2319-4200, p-ISSN: 2319-4197 www.iosrjournals.org Design, Simulation and Comparative Analysis of Performance Parameters of a 4-bit CMOS
High third-order optical nonlinear performance in CMOS devices integrated with 2D graphene oxide films
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We report enhanced nonlinear optics in complementary metal-oxide-semiconductor ( CMOS ) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) lms. We integrate GO lms with silicon-on-insulator nanowires (SOI), high index
Design of 26GHz Cascode Low Noise Amplifier for 5G Wireless Applications on 0.18 µm CMOS Technology
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Low noise amplifier is an important component of front-end receiver as it amplifies the gain of circuit without degrading its noise figure. This paper presents a modified low noise amplifier composed of three stages: common source followed by 1st and 2nd cascode stage Process variability in deeply scaled CMOS has both random and systematic components, with a varying degree of spatial correlation. A test chip has been built to study the effects of circuit layout on variability of delay and power dissipation in 90nm CMOS . The delay is
Analytical Modeling of Power Supply Induced Jitter in CMOS Inverters due to Periodic Fluctuations
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This paper presents an analytical approach to evaluate jitter in the CMOS inverters caused by the periodic fluctuations of the power supply. A closed-form equation of time interval error (TIE) is derived that uses device model parameters to calculate it. In order to derive the
5 THz bandwidth photonic radio frequency spectrum analyzer based on a CMOScompatible high-index doped silica waveguide
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We report an all-optical radio-frequency (RF) spectrum analyzer with a bandwidth greater than 5 terahertz (THz), based on a 50-cm long spiral waveguide in a CMOScompatible high- index doped silica platform. By carefully mapping out the dispersion pro le of the
A SOLIDLY MOUNTED RESONATOR WITH CMOSFABRICATED ACOUSTIC MIRROR FOR LOW-COST AIR QUALITY MONITORING
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This work presents a novel Solidly Mounted Resonator (SMR) device for use in a portable, low-cost and lowpower air quality monitor. The acoustic mirror, an essential part of the SMR device for energy confinement, is fabricated within a CMOS process, and advances upon
CMOS BASED DRIVER TREE DESIGN FOR MICROPROCESSOR CLOCK DISTRIBUTION UNITS IN BIOMEDICAL IMAGE PROCESSING CIRCUITS
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The transmission of clock signal is done across the integrated circuit in the presence of buffers and wires in synchronous biomedical systems on-chip architectures. This paper presents the investigation of the driver tree architecture to be used in microprocessor and Non zero signal rise and fall times contribute significantly to CMOS gate performances such as propagation delay or short circuit power dissipation. We present a closed form expression to model output rise and fall times in deep submicron CMOS structures. The model is first In recent days the requirement of various kinds of filters has been increased for wirelesscommunication and the primary effort on a resourceful practice to design and synthesize the Bandpass filter for different wireless application is presented. This paper We have developed and demonstrated a new methodology for in situ monitoring and characterization of CMOS post-process micromachining utilizing integrated circuits and micromachine test-structures. In our demonstration, the circuits provide automated readout Analog and RF circuit performance in single-chip transceivers can severely suffer from coupling of digital switching noise to the silicon substrate. To predict this performance degradation, a deeper understanding of the impact of substrate noise is absolutely
Probabilistic based CMOS Adder for High Speed Communication Systems
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Power efficient is an important availability for various mobile devices and communication system applications. The proposed probabilistic adder is to trade a lesser amount of accuracy with reduced power dissipation. In this paper, the probabilistic adder is eliminating
A new Li-ion battery charger with charge mode selection based on 0.18 um CMOS for phone applications.
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A new architecture of Li-Ion battery charger with charge mode selection is presented in this work. To ensure high efficiency, good accuracy and complete protection mode, we propose an architecture based on variable current source, temperature detector and power control
12.2 GHz All-digital PLL with Pattern Memorizing Cells for Low Power/low Jitter using 65 nm CMOS Process
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A system level power/jitter reduction technique of all-digital phase locked loop (ADPLL) design has been developed. The architecture to memorize the repetitive control signal pattern of digitally-controlled oscillator (DCO) during lock state and to regenerate the pattern
A Multiplexed Chemical Sensing CMOS Imager
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A miniaturized and multiplexed chemical sensing technology is urgently needed to empower mobile devices, Internet-of-Things (IoTs) and robots for various new applications. Here, we show that a complementary metal-oxide-semiconductor ( CMOS ) imager can be turned into a50 GHz were recently achieved in CMOS technology . To improve their sensitivity and signal-to-noise ratio, while maintaining microwave performance, several design parameters must be considered, such as the number and placement of thermocouples. This paper
Modelling Considerations for Coupled Lines in CMOS Back-End-Of-Line at mm-Wave Frequencies
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We investigate the effect of passivation contouring, surface roughness, and sidewall etch tapering on the FEM modelling accuracy of mm-wave couplers in CMOS BEOL. It is found that accurate passivation contouring leads to a marginal improvement of 0.15 dB in peak
Modelling and Optimization of High-Efficiency Differential-Drive CMOS Rectifier for UHF RF Energy Harvesters
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Differential-drive cross-coupled (DDCC) rectifier is an important type of rectifiers for RF energy harvesting. In this paper, the analytical model of a DDCC rectifier is derived. With this model, optimization procedures for most power efficient rectifiers are derived. The model is
of 12 µVRMS Extracellular Action Potential and Local Field Potential by Optimum Design of a Single Pixel Electrolyte-Oxide-MOSFET Interface in CMOS 28
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Microelectrode-Arrays (MEAs) allow monitoring thousands of neurons/mm2 by sensing: extracellular Action Potentials and (in-vivo) Local Field Potentials. MEAs arrange several recording sites (or pixels) in a spatial grid, planarly and capacitively coupled with in-vitro cell
Analysis of a Tunable CMOScompatible Multilayer Waveguide Structure for Dual Polarizer-modulator Operation
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A multilayer structure using graphene on a silicon waveguide is introduced and optimized to 8 operate as a tunable TE-pass polarizer at 1310 nm or 1550 nm, a tunable TE/TM modulator at 1310 nm or 9 1550 nm, and a dual operation as a modulator at 1310 nm and a
Two dimensional graphene oxide films for enhanced optical nonlinear performance in CMOS compatible integrated devices
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We report enhanced nonlinear optics in complementary metal-oxide-semiconductor ( CMOS ) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped
An E±cient Architecture for Accurate and Low Power CMOS Analog Multiplier¤
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A new analog four-quadrant multiplier in CMOS technology is proposed using translinear loops (TLs). The novelty of the work includes an improved structure resulting in high precision output, low power consumption and low body e ect error. The higher accuracy is
Chip characterization and Database development for HD CMOS MEAs
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Multi-electrode array chips are rapidly growing as one of the main ideal technologies to unveil complex electrophysiological dynamics of both cells and tissues. While this technology can rely on the special interaction of living cells with the peculiar structure of this
Conception et mise en œuvre dun convertisseur DC/DC 4.2 V en technologie CMOS 0.18 um
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Due to the safety measures taken by the Government of Quebec and the University to put a stop to COVID-19 propagation, diffusion of deposits made into CorpusUL cannot be guaranteed within standard delays. For more information, please write to corpus@ ulaval International Research Journal of Computer Science (IRJCS) DESIGN AND SIMULATION OF LOW POWER, HIGH GAIN AND HIGH BANDWIDTH CMOS FOLDED CASCODE OTA Sudhakar Department of ECE, Integral University, Lucknow, India sudhakars@iul.ac.in * Imran
Adaptation of a CMOS Reliability Simulation Model for the Open Model Interface.
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Page 1. ABSTRACT COLEBAUGH, SARAH. Adaptation of a CMOS Reliability Simulation Model for the Open Model Interface. (Under the direction of Dr. William Rhett Davis.) The HiSIM2 transistor model released by Hiroshima University can be used to predict the effects of hot carrier injection
Co-integration of single transistor neurons and synapses by nanoscale CMOS fabrication for highly scalable neuromorphic hardware
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Co-integration of multi-state single transistor neurons and synapses was demonstrated for highly scalable neuromorphic hardware, using nanoscale complementary metal-oxide- semiconductor ( CMOS ) fabrication. The neurons and synapses were integrated on the same