MOSFET METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 2019


Analogue and RF performances of Fully Depleted SOI MOSFET
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Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich

High Frequency Resonant Operation of an Integrated Medium Voltage SiC MOSFET Power Module
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Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium voltage silicon carbide semiconductor power devices have a potential to replace vacuum tubes and allow for more

Recent Progress of SiC MOSFET Devices
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Article Preview Article Preview Article Preview SiC MOSFETs are superior candidates as next power semiconductor devices for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the

Nonstationary Low Frequency Noise in Switched MOSFET Circuits Circuit Simulation
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Modeling and analysis of low frequency noise under strongly time-varying bias conditions is a long-standing open problem in circuit simulation. In this paper, we present the background on the nonstationary low frequency noise modeling problem in circuit simulation, the legacy

SPICE MODEL OF DRAIN INDUCED BARRIER LOWERING IN SYMMETRIC JUNCTIONLESS DOUBLE GATE MOSFET
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A SPICE model of Drain Induced Barrier Lowering (DIBL) has been proposed for a symmetric junctionless double gate (JLDG) MOSFET . For this purpose, the potential distribution in the channel is obtained using the Poisson equation, and the threshold voltage

Qualitative Analysis of High Gain Small-signal Amplifier with MOSFET Current Mirror
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A small-signal high voltage gain amplifier with two identical MOSFET current mirrors is proposed and analyzed on the qualitative scale. In the narrow band (bandwidth 4.093 KHz) performance range, the proposed amplifier produces high voltage gain (141.883), almost

EFFECT OF CHANNEL LENGTH VARIATION ON ANALOG AND RF PERFORMANCE OF JUNCTIONLESS DOUBLE GATE VERTICAL MOSFET
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This paper investigates the effect of channel length (Lch) variation upon analogue and radio frequency (RF) performance of Junctionless Double Gate Vertical MOSFET (JLDGVM). The study has been performed under the fixed level of process parameters by considering the

Measurement and Simulation of Mosfet Device Parameters
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Knowing the current-voltage (IV) characteristics of MOSFETs used as switching devices is very important in circuit designs where detailed specifications are needed. Therefore, preapplication simulation is very important. Simulation of power electronic devices can be

PIR SENSOR MOTION DETECTION SYSTEM USING MEMS MOSFET ANALYSIS
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PIR sensory system for the animal and human motion detection it detects the heat emitted by the object and it also measures the change in radiation. The measuring can be done by the radiation of a non contacting detection at minimum distance. PIR sensor works on the

TEMPLATE MODELING OF A P-CHANNEL MOSFET
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A new MOSFET model for liquid-helium temperatures is introduced for needs of analog circuits designers. This model is created by the replacement of certain parameters of the original physical compact model by the quotient of power series of a gate and drain

A MOSFET Capacitance Model for all Gate Biasing
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The present paper describes a modeling of the capacitance of a MOSFET operated in all regions, ie subthreshold linear and saturation. The model is based on the electric charges behavior under a dynamic gate biasing and sweeping the Si-SiO2 interface from deep

Digital Control of BLDC Motor By Using MOSFET and Microcontroller
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Now a day BLDC motor is becoming very famous in the department of aerospace, automation, computers, military, household appliances and traction applications because of its high competency and low maintenance cost. Because of this the four quadrant operation

MOSFET Based Ultra-low Power Realization of Analog Joint Source-Channel Coding
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Energy-efficient Analog Sensing for Large-scale, High-density Persistent Wireless Monitoring, in Proc. of IEEE Annual Conference on Wireless On-Demand Network Systems (WONS), February 2017 C. Shannon, Communication

MOSFET SCALING-2nd IA VLSI DESING 2
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PERFORMANCE ENHANCEMENT OF MULTIGATE MOSFET USING ENGINEERING TECHNIQUE-A REVIEW
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The design of future VLSI circuits using conventional MOSFET has become a challenge for the device engineers. The presence of short channel effects at nanoscale has becomes the limiting factor for the futuristic devices. The dielectric engineering along with gate and

Variation Effect of Silicon Film Thickness on Electrical Properties of NANO- MOSFET
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Owing to the fact that metal oxide semiconductor field effect transistors (MOSFETs) can be effortlessly assimilated into ICs, they have become the heart of the growing semiconductor industry. The need to procure low power dissipation, high operating speed and small size

Microelectronic Transducer of Gas Concentration based on MOSFET with an Active Inductive Element
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This article presents the microelectronic transducer of gas concentration. The transducer have been used in the absorption spectroscopy technique equipment for measuring concentration of combustible gases. The transducer contains photoresistor and

OPTIMISATION OF UNDERLAP OF SUB 16 nm DOUBLE GATE MOSFET FOR SUPERIOR ANALOG/RF PERFORMANCE
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In the beginning of twenty first century scaling down of MOSFET devices has pushed its dimension into nanometer realm. Scaling down of the device though increase the on current (ION) of the device however, it also leads to Short Channel Effects (SCE) ,[2-4]. The

RADIATION DOSE DETERMINATION USING MOSFET AND RPL DOSIMETERS IN X-RAY IMAGING
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Medical x-ray imaging is used to visualise patients anatomical structures and in some cases their physiology. X-rays are ionizing radiation, thus their use needs to be optimised, as stochastic effects are assumed to increase linearly with the exposure dose. Imaging

Floating Gate MOSFET Based Current Differencing Buffered Amplifier and Its Applications as Third-Order Filters
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In this paper, a floating gate MOS (FGMOS) based current differencing buffer amplifier (CDBA) has been presented. The proposed CDBA operates at low supply voltage of±1.25 V and consumes minimum power of 2.78 mW. The maximum linear range for the current



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