SRAM DESIGN-VLSI PROJECT


Static random-access memory is a type of semiconductor random-access memory that uses bistable latching circuitry to store each bit. SRAM exhibits data remanence, but it is still volatile in the conventional sense that data is eventually lost when the memory is not powered

Deep sub-micron sram design for ultra-low leakage standby operation
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Design trade-offs of a 6T FinFET SRAM cell in the presence of variations
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As the impact of process variations become increasingly significant in ultra deep submicron technologies, FinFETs are becoming increasingly popular a contender for replacement of bulk FETs due to favorable device characteristics. This paper explores the impacts of

Low power SRAM design with reduced read/write time
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This paper explores the design and analysis of Static Random Access Memories (SRAMs) which focusses on optimizing delay and power. CMOS SRAM cell consumes very less power and have less read and write time. Higher cell ratios can decrease the read and write

Using subthreshold SRAM to design low-power crypto hardware
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Cryptography and Security hardware architecture designing is in essential need for efficient power utilization which is achieved earlier by giving a range of tradeoff between speed and power consumption. This paper presents the initiative of considering subthreshold SRAM

Reducing leakage power for sram design using sleep transistor
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CMOS technology scaling continues to reduce switching delay and power while improving area density . As technology is scaled further, it brings challenging issues like process variations and increase in transistor leakage. A high performance VLSI microprocessor

Synchronous 16×8 SRAM design
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Memory arrays are an essential building block in any digital system. The aspects of designing an SRAM are very vital to designing other digital circuits as well. The majority of space taken in an integrated circuit is the memory. SRAM design consists of key

A framework for soft error tolerant SRAM design
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Page 1. A FRAMEWORK FOR SOFT ERROR TOLERANT SRAM DESIGN

Design and verification of low power SRAM using 8T SRAM cell approach
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ABSTRACT SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. Advances in chip designing have made possible the design of chips at high integration and fast performance. Lowering power

8T SRAM cell design for dynamic and leakage power reduction
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This paper addresses a, novel eight transistor (8T) CMOS SRAM cell design to enhance the stability and to reduce dynamic and leakage power. We compared our results with reported data, for the validation of our proposed 8T SRAM cell. The parameters used in the proposed

Performance evalution of CNTFET-based SRAM cell design
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Carbon Nanotube Field-Effect Transistor (CNTFET) technology with their excellent current capabilities, ballistic transport operation and superior thermal conductivities has proved to be a very promising and superior alternative to the conventional CMOS technology. A

CMOS VLSI design of low power SRAM cell architectures with new TMR: A layout approach
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Rapid increase in technology for faster and smarter innovations that smoothens the needs of humans resulting in use of super tech gadgets, which use memory, such as, RAM. To meet the increasing demands, the size is getting reduced and the need to save power arises

Simulation of an Embedded Processor Kernel Design on SRAM -Based FPGA
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Very Large Scale Integration (VLSI) technology has become the main key to speed up the implementation of powerful processor kernels at low cost. Based on VLSI it has become possible building chips with more than a million transistors, as exemplified by state-of-the-art

Design and simulation of 6T SRAM cell architectures in 32nm technology
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A comparative study of various 6T SRAM cell layouts is presented at 32 nm, including four symmetric topologies. The comparison comprises two conventional cells, a thin cell, which is the current industry standard, and a recently proposed ultrathin cell. The evaluation is based

Irradiation tests of the ALTERA SRAM based FPGA and fault tolerant design concepts
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Abstract In the ALICE Time Projection Chamber TPC at CERN the front end electronics will be located about 3 meters from the interaction point and will therefore be exposed to radiation generated by the particle collisions. Consequently this can lead to single event

Resilient design methodology for Energy-Efficient SRAM
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Increasing process variability limits energy reduction in SRAM design by increasing the need for margining and preventing optimal supply voltage scaling. However, tolerating variability with resilient designs can prevent these limitations and enable future energy

Design of low write-power consumption SRAM cell based on CNTFET at 32nm Technology
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The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. Carbon Nanotube Field Effect Transistor (CNFET) is used for high performance, high stability and low-power circuit designs as an alternative material to silicon in recent years

Power efficient design of SRAM arrays and optimal design of signal and power distribution networks in VLSI circuits
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CMOS scaling beyond the 90nm technology node requires not only very low threshold voltages (Vt) to retain the device switching speeds, but also ultra-thin gate oxides (Tox) to maintain the current drive and keep threshold voltage variations under control when dealing

Low Power Design and Simulation of 7T SRAM Cell using various Circuit Techniques
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Low power memory is required today most priority with also high stability. The power is most important factor for today technology so the power reduction for one cell is vital role in memory design techniques. In this paper we introduced some design circuit techniques for

Highly Stable 65 nm Node (CMOS5) 0.56 μm2 SRAM Cell Design for Very Low Operation Voltage
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This paper presents a very high density embedded SRAM technology for 65nm node (CMOS5). The SRAM cell size is 0.56 μm2, which is the smallest of all reported SRAM cells. This fabrication is fully compatible with CMOS logic technologies, using optimized optical

Design and comparison of Single Bit SRAM Cell Under different Configurations
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Memory is widely used in all electrical systems mainframes microcomputers and cellular phones etc. From the last more than five decades we are scaling down the size of the CMOS devices to make the devices portable and compact in size and to get better performance in



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