mosfet design research papers


 

Source/Drain Parasitic Resistance Role and Electrical Coupling Effect in sub 50nm MOSFET Design
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ABSTRACT Source/Drain (S/D) parasitic resistance limitation and electrical coupling effect have been studied in sub 50nm MOSFET device. S/D extension region under sidewall spacer can be the main part of the total S/D series resistance, box-like junction application can

Nanoscale thin-body MOSFET design and applications
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Double gate MOSFETs (Figure 2.1) such as the FinFET are promising structures to be scaled into the sub-25nm regime [1-4]. DG-MOSFETs usually are designed to have a very thin Si channel that is fully-depleted in order to cut-off sub-surface leakage paths, thereby

Starting over: gm/ID-based MOSFET modeling as a basis for modernized analog designmethodologies
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Abstract A method of interpreting MOSFET behavior is described which is more coherent for modern analog CMOS circuit design. This method supercedes the use of simple but antiquated equations in design, and replaces them with an approach based on the

Accounting for quantum effects and polysilicon depletion in an analytical design-orientedMOSFET model
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Abstract An analytical MOSFET model is presented that accounts for energy quantization in inversion charge and depletion in the poly gate. The model consistently describes effects on charges, transcapacitances, drain current and transconductances in all regions of

Effective circuit design techniques to increase MOSFET power amplifier efficiency
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The ideal class F amplifier with a voltage secondharmonic shortcircuit termination and current thirdharmonic peaking allows realization of the maximum drain efficiency of 75 percent. 3 For a lumped-circuit amplifier, in order to approximate ideal class F operation

Design and application guide for high speed MOSFET gate drive circuits
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ABSTRACT The main purpose of this paper is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a one-stop-shopping to solve the most common

CMOS analog design using all-region MOSFET modeling
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ALL-REGION MOSFET MODELING Mrcio Cherem Schneider and Carlos Galup-Montoro ?Compact MOSFET model ? Circuit examples: MOSFET sizing in amplifiers

FlipFET TM MOSFET Design for High Volume SMT Assembly
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International Rectifier has used a proprietary technique to position all the terminals of a HEXFET device on the same face of the die. This has enabled the development of wafer scale packaged MOSFETs. We re calling the technology platform the FlipFET MOSFET, 

Design, modeling, and characterization of power MOSFET in 4H-SiC for extreme environment applications
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ABSTRACT Silicon Carbide (SiC) is an emerging technology for extreme environment electronics applications. In this paper, an analytical model for vertical DIMOS transistor structure in SiC is presented. The model takes into account the various short channel

Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application
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ABSTRACT In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC) MOSFET has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared

Using National Instruments LabVIEW Software in an Introductory Electronics Course–MOSFET Transistor Parameter Estimation and Bias Circuit Design
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ABSTRACT Student understanding of the link between theory and application has always been a critical objective in electronics education. National Instruments LabVIEW virtual instrument software is a tool that can be used very effectively to promote student understanding of

Low Voltage SC Circuit Design Using Short-Channel MOSFET Switches
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ABSTRACT Analog switches, which are known to be the bottle-neck for reducing the supply voltage, are analyzed. MOSFET transistors with channel lengths shorter than the minimum feature size (L0) in a given technology are proposed for use as switches operated at a low

Design of a MOSFET-Based Pulsed Power Supply for Electroporation
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ABSTRACT The use of high-voltage pulsed electric fields in biotechnology and medicine has lead to new methods of cancer treatment, gene therapy, drug delivery, and non-thermal inactivation of microorganisms. Regardless of the application, the objective is to open

A New Nanoscale DG MOSFET Design with Enhanced Performance-A Comparative Study
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ABSTRACT Triple Material (TM) Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this paper. A lightly doped channel has been taken to enhance the device performance and

Impact of Multi-Layered Gate Design on Hot Carrier Reliability of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET
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Abstract The paper discusses hot carrier reliability assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET involving channel recession and gate electrode workfunction engineering integration onto the conventional

A MOSFET Design Laboratory
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ABSTRACT The authors have developed a MOSFET design l aboratory to enhance a graduate level Device Physics course at San Jose State University using Silvaco s device design tools and simulation platform. The laboratory experiments guide students through designing

New Gate Stack Double Diffusion MOSFET Design to Improve the Electrical Performances for Power Applications
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Z Dibi, F Djeffal, N Lakhdar ABSTRACT In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over

The Advanced Compact MOSFET Model and its Application to Inversion Coefficient Based Circuit Design
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S Nicolson ,eecg.toronto.edu ABSTRACT Contemporary MOSFET mathematical models contain many parameters, most of which have little or no meaning to circuit designers. Designers therefore, continue to use obsolete models:such as the MOSFET square law:for circuit design calculations. <

MOSFET Modeling for Low Temperature Analog Circuit Design
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P MARTIN ,ekv.epfl.ch processes at LT • Compact MOSFET model for analog circuit design • Examples of simulation • Low frequency noise • Transistor matching • Summary and conclusion

Study of the Off-state Leakage Current in Silicon-on-Insulator (SOI) n-MOSFET for RF CircuitDesign
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ABSTRACT. This paper presents a detailed analysis of the fully and partially depleted silicon- oninsulator (SOI) n-MOSFET for radio frequency (RF) applications. The analysis focused on the dependence of off-state leakage current on temperature, oxide thickness, silicon film

DESIGN, FABRICATION AND CHARACTERIZATION OF LIGHT SENSING MOSFET (LISFET) FOR SECURITY SYSTEM APPLICATION
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KA Rahman, U Hashim ABSTRACT The usage of MOSFET is not limited as amplifier and switch only but it has great potential to become the sensors when sensing mediums are integrated to MOSFET. This research is intended to study the combination of MOSFET and photoconductive material to

Design of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance
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Super-junction (SJ) metal-oxide semiconductor ?eld-effect transistor (MOSFET) power devices are well known for lower on-state resistance and gate charge. However, it is difficult to fabricate the exact balanced doping pro?le, and the impact of imbalance results in

Measurements and Modeling of MOSFET Inversion Level Over a Wide Range As a Basis for Analog Design
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D Foty, D Binkley, M Bucher ,lib.tkk.fi Abstract A method of interpreting MOSFET behavior is described which is more coherent for modern analog CMOS circuit design. This method supercedes the use of simple but antiquated equations in design, and replaces them with an approach based on the

Board Design and Construction for a MOSFET Noise Measurement System
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A present discrepancy in circuit design is inaccurate characterization of MOSFET noise performance for numerous CMOS processes utilized in the marketplace. Ultimately this inhibits the achievable circuit simulation accuracy.

Advanced MOSFET Modeling for RF IC Design
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Y Cheng ABSTRACT In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated- circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with comparisons of the data for

Gate Leakage Aware Optimal Design of Modified Hybrid Nanoscale MOSFET and Its Application to Logic Circuits
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ABSTRACT With the explosive growth in portable computing and wireless communication during last few years, power dissipation has become critical issue. Under such condition gate leakage has been recognized as a dominant component of power dissipation. This

Optimizing the Design of 3.5 kW Single-MOSFET Power Factor Correctors
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K Dierberger, D Grafam ,Application Note APT9901, Advanced Power ,microsemi.com ABSTRACT At power levels exceeding about 750 Watts the most common power factor correction (PFC) topology in use today is the continuous-mode boost converter. In such a converter the gate drive output from popular IC controller chips is ill-suited for switching

Using Modeling and Simulation to Study the Impact of Multilayered Gate Dielectric (MGD)Design on Device Performance of Surrounding Gate MOSFET
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H Kaur, S Kabra, S Haldar, RS Gupta ,cnfrs.institut-telecom.fr ABSTRACT In the present work, a two-dimensional analytical model is presented to study the impact he impact of multi-layered gate dielectric (MGD) design on the device performance of surrounding gate MOSFETs and its effectiveness in suppressing short channel effects and

Analytical Drain Current Model for Multilayered-Gate Material Engineered Trapezoidal Recessed Channel (MLGME-TRC) MOSFET: a Novel Design
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P Malik, R Chaujar, M Gupta (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate

A Method of MOSFET Dopant Pro?le Prediction and its Use in Transistor Design
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ABSTRACT As MOS transistor size shrinks to sub-quartermicron dimensions, accurate knowledge of the dopant concentration in various regions of the transistor is becoming more and more important for device simulations. We have developed a methodology to quickly

MOSFET Modeling and Circuit Design: Re-Establishing a Lost Connection
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D Foty, D Binkley ,cecs.uci.edu Amid the blizzard of design-automation technologies, the analytical MOSFET models (and their associated model parameter sets) receive scant attention from the design community. However, these models and parameter sets are fundamental to the design process, since

SIGNAL MODELING AND PARAMETER EXTRACTION TECHNIQUE FOR OVERLAP AND UNDERLAP DOUBLE GATE MOSFET FOR RF CIRCUIT DESIGN
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S Niyogi, K Koley, CK Sarkar, S Pandit ,grabinski.ch Page 1. SMALL SIGNAL MODELING AND PARAMETER EXTRACTION TECHNIQUE FOR OVERLAP AND UNDERLAP DOUBLE GATE MOSFET FOR RF CIRCUIT DESIGN Saptak Niyogi, Kalyan Koley, Chandan Kumar Sarkar and Soumya Pandit1

Microfluidic Design of Neuron-MOSFET Based on ISFET
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A Jain, A Garg ,comsol.se ABSTRACT In this Paper we suggest a device which combines the operation of a neuron-MOS [1][3] and an ISFET . An ISFET is an ion-sensitive field effect transistor used to measure ion concentrations in a solution; when the ion concentration changes, the current through

Design of a Lateral MOSFET in Silicon Carbide
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Due to silicon carbide s high breakdown strength and high thermal conductivity , it is an ideal semiconductor material for the implementation of devices used in high power switching and high power microwave applications. Devices used in these

Design Consideration and Effect of Parameter Variation on sub-40nm Bulk MOSFET using TCAD Tool
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SI Amin, MS Alam, R Khanam ,irphouse.com ABSTRACT The scaling of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been governed over past several decades and is now becoming very critical due to its scaling limit and its short channel effects (SCE). In this paper several design consideration

The Design and Realization of Depletion Mode MOSFET Devices
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ABSTRACT Our study involves the design, fabrication, and characterization of the basic depletion mode MOSFET devices on four-inch silicon wafers. The results of our study will include discussions of the following: 1) basic semiconductor device design and

Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
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ABSTRACT High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4 MHz. The MOSFET in this device has

T An Optimum Design ofT Saddle MOSFET with Recess Channel and Side-Gate
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KH Park, KR Han, JH LeeP ,sisys.snu.ac.kr As one of highly scalable MOSFET structures, concave (or recess) channel MOSETs have been reported . However, it is well known that the recess channel devices have high VBthB sensitivity with the corner shape and serious back-bias effect. The recess channel

Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance
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The design and analysis of an enhanced performance of vertical MOSFET is revealed by adopting the oblique rotating ion implantation (ORI) method combined with fillet oxidation (FILOX) technology. These CMOS compatible processes have formed the symmetrical self

Modeling a MOSFET for Monolithic Millimeter-wave Integrated Circuit Design
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ABSTRACT The millimetre-wave spectrum at 30-300 GHz is of increasing interest to service providers and systems designers because of the wide bandwidths available for carrying communications at this frequency range. These wide bandwidths are valuable in

A Guideline for Material Design of Gate Oxide in Further Scaled MOSFET~ Improvement of electrical properties by CeO2/La2O3 stack structure~
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3.3 Fixed charge in film 3.3. 1 Calculation method of fixed charge 3.3. 2 Quantity fixed charge in each film 3.3. 3 Comparison of the each Qit 3.3. 4 change of Vfb value 3.3. 5 Physical thickness-related Vfb values rapidly change 3.3. 6 Conclusion

Design and Performance Comparison of SOI and Conventional MOSFET Based CMOS Inverter
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S Deb, CJC Singh, SK Sarkar, NB Singh, PC Pradhan ,ISDMISC-2011 ABSTRACT With the emergence of mobile computing and communication, low power device design and implementation have got a significant role to play in VLSI circuit design. Continuous device performance improvement has been made possible only through a

Design and Simulation Analysis of Vertical Double-Gate MOSFET (VDGM) Structure for Nano-device Application
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ABSTRACT Design and simulation analysis of vertical MOSFET structure with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, Lg= 50nm and analyzing its effect

Design and Development of the Class E RF Power Amplifier Prototype by Using a PowerMOSFET
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ABSTRACT The continuous rise of global sea level demands better and more accurate models of the ice sheets and glaciers in polar regions for better understanding and prediction so that we can minimize the resulting damages to the world. This requires more sophisticated and

Analoge Verhaltensbeschreibung in Advanced Design System von Agilent ADS2004A, mit Blick auf aktuelle MOSFET-Modelle
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LSI Logic: The SP and EKV models are far easier to use in fitting Vth vs. L and are more accurate than BSIM3 in this regard. And the SP and EKV models are far superior to BSIM3 in extending a current model to future technologies, both in ease of use and inaccuracy.

SIFIR AS li 2. HARMONIK MOSFET KARISTIRICI TASARIMI DESIGN OF 2nd HARMONIC MIXER WITH ZERO-IF
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O Palamutuoglu, M Kayhan ,emo.org.tr ABSTRACT This paper presents the design of a second harmonically pumped MOSFET RF Mixer with zero-IF for HyperLan applications which operates at 5, 8 GHz. Second harmonic pumping has never been used so far in HyperLan applications. It is belived that, since it

POMPALAMALI 5, 8 GHz MOSFET KARISTIRICI TASARIMI DESIGN OF SECOND HARMOICALLY PUMPED 5, 8 GHz MOSFET MIXER WITH ZERO-IF
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OPM Kayhan .tr ABSTRACT This paper presents the design of a second harmonically pumped MOSFET RF Mixer with zero-IF for HyperLan applications which operates at 5, 8 GHz. Second harmonic pumping has never been used so far in HyperLan applications. It is belived that, since it

Design Guideline of Ultra Thin Body MOSFET
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ABSTRACT Simulation method is used to provide a guideline for ultra thin body (UTB) MOSFET designs. Three important parameters of the UT B MOSFET, ie the raised S/D height, Ge mole fraction of the Gex Si1-x gate, and the silicon body thickness, are comprehensively

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