Advances in flash memory devices
A new 2 isolated-bits/cell flash memory device with self aligned split gate structure using ONO stacks for charge storage
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Abstract Recently, charge trapping flash memory devices are gaining a lot of attention because of their superior scalability as compared to floating gate devices . However, further improvements are required for reaching a real breakthrough
Memory types
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memory . Flash memory combines the best fea- tures of the memory devices described thus far. Flash memory devices are high density, low cost, nonvolatile, fast (to read, but not to write), and electrically reprogrammable. These
Advances in flash memory devices .
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Fundamental challenges are discussed concerning the down-scaling of flash memory cells for mass storage applications. A general scaling issue for all various memory cell concepts is the structuring limit of conventional lithography. Therefore sub-lithographical structuring
Forensic data recovery from flash memory
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analysis. This paper suggests a low level approach for the forensic examination of flash memories and describes three low-level data acquisition methods for making full memory copies of flash memory devices . Results are
Nanocrystal non-volatile flash memory devices : A simulation study
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We have simulated the programming/erasing characteristics and studied the reliability aspects of silicon nanocrystal memory (NCM) cells Due to the charge storage in discrete nodes, NCM cells clearly show a very high robustness against gate and drain disturbs and
A transactional flash file system for microcontrollers.
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Abstract We present a transactional file system for flash memory devices The memory space of flash devices is partitioned into erase units, which are the smallest blocks of memory that can be erased. TFFS assumes that all erase units have the same size
MOS memory using germanium nanocrystals formed by thermal oxidation of Si1-xGex
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S. Crowder, S. Stiffler, P. Parries, G. Bronner, Trade-offs in the integration of high performance devices with trench capacitor DRAM. International Electron Devices Meeting 1997. IEDM Technical Digest. p. 45-8. P. Pavan, R. Bez, P. Olivo, E. Zanoni, Flash memory cells-an
Building flexible, fault-tolerant flashbased storage systems
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1 Introduction Recent advances in the performance and density of NAND flash memory devices offer the promise of great performance and low energy consumption. NAND flash is being used to replace DRAM-based disk caches
BPLRU: A Buffer Management Scheme for Improving Random Writes in Flash Storage.
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Abstract Flash memory has become the most important storage media in mobile devices and is beginning to replace hard disks in desktop systems Therefore, many flash memorybased devices use wear-leveling techniques to ensure that blocks wear out evenly
Phoenix flash code: introducing the absorption and revival operations for reducing flash memory write deficiency
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Simulation experiments were conducted, and the results in- dicate that the Pheonix Flash Code has significantly lower write deficiency compared to several known flash codes and therefore be expected to allow more write operations to flash memory devices
How Flash Memory Works
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In this article, well find out how Flash memory works and look at some of the forms it takes and types of devices that use it While your computers BIOS chip is the most common form of Flash memory removable solid- state storage devices are becoming increasingly popular
Ferroelectric memory devices
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Upon scaling down and lowering the operating voltage, FLASH will no longer work. In this paper one of the alternatives is being reviewed; ferroelectric memory devices At the moment FLASHbased memory technology is leading in the field of memory devices
Nanocrystal non-volatile memory devices
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between nanocrystalline or amorphous state with high and low conductivity, respectively . The goal of these studies is to overcome the difficulties of floating gate non-volatile memory devices (used eg in flash memories), which are connected with technology scale-down
A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory
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I. INTRODUCTION With the exploding demand for mobile devices the market of NAND flash memory devices have expanded dramatically (100353 Development of novel 3D stacked devices and core materials for the next generation flash memory ) REFERENCES
Two-bit/cell NFGM devices for high-density NOR flash memory
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The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to
A Survey of 3D Nand Flash Memory
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136- 13 2009 Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high- density and cost-effective NAND Flash memory devices and SSD (Solid State Drive) by Jiyoung Kim, Augustin J. Hong, Sung Min Kim, Emil B. Song, Jeung Hun Park, Jeonghee Han, Siyoung Choi
The bleak future of NAND flash memory .
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devices 2010. DENALI. http://www.denali.com/wordpress/index.p- hp/dmr/2009/07/16/nand- forward-prices-rate-of-decline-will. GRUPP, LM, CAULFIELD, AM, COBURN, J., SWANSON, S., YAAKOBI, E., SIEGEL, PH, AND WOLF, JK Character- izing flash memory
The inconvenient truths of NAND flash memory
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A managed interface addresses the complexities of current and future NAND Flash devices ; this means the host does not need to know the erase/read device with bad blocks and bad bits (NAND Flash ) into a simple write/read memory Page 30
JFFS: The journalling flash file system
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Until recently, the common approach to using Flash memory technology in embedded devices has been to use a pseudo-filesystem on the flash chips to em- ulate a standard block device and provide wear lev- elling, and to use a normal file system on top of that emulated block
Trends in NAND flash memory error correction
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SLC versus MLC Flash NAND flash memory uses an array of floating- gate transistors to store information. In traditional single-level cell (SLC) devices each bit cell stores only one bit of information. Multi- level cell (MLC) devices CSE PROJECTS