DRAM DYNAMIC RANDOM ACCESS MEMORY DESIGN -VLSI PROJECT



Analysis of power dissipation in DRAM cells design for nanoscale memories
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In this paper power dissipation analysis for DRAM design have been carried out for the Nanoscale memories. Many advanced processors now have on chip instructions and data memory using DRAMs. The major contribution of power dissipation in DRAM is off-state

Performance comparison of 4T, 3T and 3T1D DRAM cell design on 32 nm technology
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In this paper average power consumption of dram cell designs have been analyzed for the nanometer scale memories. Many modern processors use dram for on chip data and program memory. The major contributor of power in dram is the off state leakage current

Evaluation, design and implementation of multilevel DRAM
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Multilevel DRAM (MLDRAM) attempts to increase storage density by storing more than one bit per memory cell. Several different two-bit-per-cellschemes have been described in the literature and some have been implemented on large test chips. However, none of the

Impact of processing technology on dram sense amplifier design
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Sense amplifier design is critical to DRAM performance. As DRAM chip capacity has increased, different sensing schemes have been employed. The purpose of this work is to explain impacts of processing technology on DRAM sense amplifier design and to identify

Five emerging DRAM interfaces you should know for your next design
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Because dynamic random-access memory ( DRAM ) has become a commodity product, suppliers are challenged to continue producing these chips in increasingly high volumes while meeting extreme price sensitivities. Its no easy feat, considering the ongoing demands

Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design Rule
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As the dynamic random access memory ( DRAM ) density enters into the giga-bit era, one of the important characteristics of a DRAM is the data retention time because the data retention time needs to be doubled as the memory density increases 4 times in every generation due

Circuit design of DRAM for mobile generation
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In recent few years, low-power electronics has been a leading drive for technology developments nourished by rapidly growing market share. Mobile DRAM , as a fundamental block of hand-held devices, is now becoming a product developed by limitless competition

Design and Implementation of a 1.2 Gbit/s ATM Cell Buffer using a Synchronous DRAM chip
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High speed networks require high throughput memories to store cells or packets. Synchronous Dynamic RAM (SDRAM) chips provide both high storage capacity and high throughput, and are thus an appropriate technology for building such cell or packet buffers

Design and implementation of 4T, 3T and 3T1D DRAM cell design on 32 NM technology
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In this paper average power consumption, write access time, read access time and retention time of dram cell designs have been analyzed for the nano-meter scale memories. Many modern day processors use dram cell for on chip data and program memory storage. The

Design and evaluation of an optical CPU- DRAM interconnect
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Four decades ago Amdahl proposed a set of rules of thumb for computer architects that have withstood the test of time. One such rule of thumb is that a balanced computing system should be capable of providing one byte of memory and one byte per second of memory

Mapping the Way Ahead by Double-Rank Appraisal Method ( DRAM ) against Subjective and Objective Constraints in Design Research
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Novel researchers, particularly those engaged with research in design ; tend to put over- emphasis on the product than the process in a research undertaking. Where a systematic and objective appraisal is required for guiding the way ahead, many failed to acknowledge

Design of Nanoscale 3-T DRAM using FinFET
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In the world of Integrated Circuits, Complementary Metal Oxide Semiconductor (CMOS) has lost its efficiency during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to hold back. As a result of such SCE many alternate devices

Design and implementation of 64 bit CMOS DRAM Memory Array and Peripheral Circuits
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Memory design is one of the interesting subjects in semiconductor technology. They have fascinated world through storage of data values and program instructions. Memory is a portion of a system for storing binary data in large quantities. Type of memory unit that is

NONOVERLAP SOURCE/DRAIN-TO-GATE NANO-CMOS STRUCTURE FOR LOW LEAKAGE DRAM DESIGN
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In order to scale CMOS devices to smaller dimensions while maintaining good control over the short-channel effect, the gate oxide thickness needs to be reduced in close proportion to the channel length . With the reduction of oxide thickness, the gate-induced drain leakage

Design and implementation of SRAM and DRAM Cells, Arrays and Peripheral Circuits
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Memory design is one of the interesting subjects in semiconductor technology. They have fascinated world through storage of data values and program instructions. Cell structure and topology is governed by the technology. The proposed memory design takes into account

Design of Process Variation 3T1D-Based DRAM Using CADENCE
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3T1D DRAM Cell to develop Process Variation Architectures using Cadence Tool. With continued technology scaling, process variations will be especially Detrimental to Threetransistor One Diode Dynamic memory structures (3T1D DRAM ). A Memory

Exploring the Design Space of DRAM Caches
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Die-stacked DRAM caches represent an emerging technology that offers a new level of cache between SRAM caches and main memory. As compared to SRAM, DRAM caches offer high capacity and bandwidth but incur high access latency costs. Therefore, DRAM

Design and Analysis of SRAM and DRAM using Microwind Software
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This study analyses an minimizing the power consumption during write and stand by operation and propagation delay during write in 6T SRAM cell and 1T1C DRAM cell. And these cells are designed using Microwind3. 5 Software in 45 nm and 32 nm CMOS

Design and Analysis of 4-BIT SRAM using Sleepy-Stack with Keeper and Dram Using Microwind
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As the technology increases the amalgamated compactness of transistor also increases. There is a demand for portable devices like mobiles, notebooks and laptops etc. For this compactness design , feature estimate is diminished by the enhanced innovation. Reduced

The Design of a Silicon Wire DRAM Cell for Very Dense DRAM Architectures
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ABSTRACT A new DRAM cell using silicon wire technology is proposed with the intention of minimizing the cell area. The DRAM cell is composed of a vertical Silicon Wire FET (SWFET) that functions as the pass-gate transistor and a layer of high dielectric constant material that