Improving Analog Performance and Suppression of Subthreshold Swing using Hetero-Junction Less Double Gate Tunnel FETs IJTSRD
In this paper, we investigated a new device, Hetero-junction less (H-JL) Double Gate Tunnel Field Effect Transistors (DGTFET) with high-k. III-V semiconductor material (like InAs-Si) gives excellent performance when InAs uses at source side, because of low band gap of 0.36 eV it reduces the potential barrier height of source channel interface causing maximum carriers […]