design-and-fabrication-of-low-cost-microwave-oscillator
DESIGN AND FABRICATION OF LOW COST MICROWAVE OSCILLATOR
Suchitav Khadanga and S. Ahmad
Millimeter Wave Devices Laboratory
Central Electronics Engineering Research Institute
Pilani – 333031, India
Abstract:- A low cost microwave oscillator is fabricated using a RF transistor having a half wave length coaxial line as feedback element. The output impedance is matched with lossless microstrip line and the output is taken across 50 load followed by a dc block capacitor. The oscillator is designed by measuring S-parameter of the transistor using a fabricated test fixture and VNA. Software is developed to determine circuit components and dimension of microstrip line, taking transistor S parameter, substrate parameter and operating point as input data. The mask required for the etching the circuit is prepared by using photoplotter. The circuit is fabricated on a low cost double sided copper clad epoxy glass PCB substrate. The power output is about 10 mw at 1.6GHz and band width of 70MHz from NEC transistor.
Oscillators are used as a microwave energy source in all microwave systems such as radar, communications, navigation or electronics warfare. These sources can be termed as dc to microwave signal converters. A typical microwave oscillator consists of an active device such as a diode or transistor and a passive frequency determining element such as a microstrip, cavity resonator, or dielectric resonator for constant frequency oscillators and a varactor or YIG sphere for tuneable oscillators. Before 1960 massive klystron and magnetron tubes were used as microwave sources. Thereafter Gunn and Impatt diodes came in form of solid state microwave oscillators. The extension of the bipolar transistor oscillator to microwave frequencies and development of GaAs MESFET devices in the early 1970 has made available today highly cost affective, miniature, reliable and low noise sources for use right upto millimetre wave frequencies. With the rapid advancement of microwave technology, there has been an increasing need for better performance of oscillators. The emphasises has been on low noise, small size, low cost, high efficiency, high temperature stability and reliability for all oscillators and additionally on wider band widths, better tuning possibility and reduced settling time for tuneable oscillators.
Transistor oscillators are high efficiency sources with low noise. Compared to Gunn oscillators, transistor oscillators do not have the problem of threshold current, heat sinking and the tendency to lock at spurious frequencies. Transistor oscillators can be realised using either bipolar transistor or GaAs FET devices. Bipolar oscillators have maximum oscillation frequency, lower than that of GaAs FET. While the former is nosier than the later. FETs are used for microwave applications such as low noise, high gain amplifications above 4 GHz. But in the field of power applications FETs have not replaced silicon BJTs below 4GHz. Since they have not able to deliver power levels high enough in class B or class C and pulsed power applications. As our desired frequency of operation is below 4 GHz, so we take silicon BJT to design our circuit. The design and fabrication of microwave oscillator using bipolar transistor have been explained in this paper.
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